MT28F128J3RP-12 ET Micron Technology Inc, MT28F128J3RP-12 ET Datasheet - Page 47
![IC FLASH 128MBIT 120NS 56TSOP](/photos/7/30/73003/mfg557-56-tsop_sml.jpg)
MT28F128J3RP-12 ET
Manufacturer Part Number
MT28F128J3RP-12 ET
Description
IC FLASH 128MBIT 120NS 56TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT28F128J3FS-12_ET_TR.pdf
(55 pages)
Specifications of MT28F128J3RP-12 ET
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16Mx8, 8Mx16)
Speed
120ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Timing Parameters
NOTE:
09005aef80b5a323
MT28F640J3.fm – Rev. N 3/05 EN
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined as the first
RC (32Mb)
RC (64Mb)
RC (128Mb)
AA (32Mb)
AA (64Mb)
AA (128Mb)
ACE (32Mb)
ACE (64Mb)
ACE (128Mb)
AOE
AOA
RWH (32Mb)
edge of CE0, CE1, or CE2 that disables the device.
Figure 19: Page Mode and Standard Word/Byte READ Operations
V
MIN
110
115
120
V
CC
CC
Q = 2.7V–3.6V
ADDRESSES
ADDRESSES
DQ0–DQ15
= 2.7V–3.6V
(A22–A3)
(A2–A0)
Disabled
Enabled
CEx
BYTE
OE#
WE#
RP#
V
CC
1
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
OL
MAX
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
110
115
120
110
115
120
150
50
25
High-Z
t RWH
UNITS
t OEC
t ACE
t CB
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ADDRESS
VALID
t AA
t OEO
47
OUTPUT
t AOE/
t AOA
VALID
t ABY
t RC
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
RWH (64Mb)
RWH (128Mb)
OEC
OEO
ODC
ODO
OH
CB
ABY
ODB
CWH
APA
ADDRESS
VALID
OUTPUT
VALID
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t APA
ADDRESS
VALID
OUTPUT
VALID
t ODB
ADDRESS
VALID
OUTPUT
VALID
V
MIN
128Mb, 64Mb, 32Mb
V
CC
0
0
0
0
t OH
t ODC
t ODO
CC
Q = 2.7V–3.6V
UNDEFINED
Q-FLASH MEMORY
t CWH
= 2.7V–3.6V
High-Z
MAX
1,000
1,000
180
210
35
15
10
25
©2000 Micron Technology. Inc.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns