MT47H256M4BT-5E:A Micron Technology Inc, MT47H256M4BT-5E:A Datasheet - Page 42
![IC DDR2 SDRAM 1GBIT 5NS 92FBGA](/photos/7/26/72643/557-92-fbga_sml.jpg)
MT47H256M4BT-5E:A
Manufacturer Part Number
MT47H256M4BT-5E:A
Description
IC DDR2 SDRAM 1GBIT 5NS 92FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H256M4HQ-5EE_TR.pdf
(131 pages)
Specifications of MT47H256M4BT-5E:A
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (256M x 4)
Speed
5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
92-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H256M4BT-5E:A
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT47H256M4BT-5E:A TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to V
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Parameter
R
EMR (A6, A2) = 0, 1
R
EMR (A6, A2) = 1, 0
R
EMR (A6, A2) = 1, 1
Deviation of VM with respect to V
TT
TT
TT
effective impedance value for 75Ω setting
effective impedance value for 150Ω setting
effective impedance value for 50Ω setting
Notes:
1. R
2. Minimum IT and AT device values are derated by six percent when the devices operate
3. Measure voltage (VM) at tested ball with no load.
SS
being tested, and then measuring current, I(V
between –40°C and 0°C (T
DDQ
TT1(EFF)
/2
and R
TT2(EFF)
are determined by separately applying V
42
C
).
Symbol
R
R
R
TT1(EFF)
TT2(EFF)
TT3(EFF)
ΔVM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
ODT DC Electrical Characteristics
1Gb: x4, x8, x16 DDR2 SDRAM
IH[AC]
Min
120
60
40
–6
), and I(V
Nom
150
75
50
–
IL[AC]
© 2004 Micron Technology, Inc. All rights reserved.
IH(AC)
Max
180
90
60
), respectively.
6
and V
Units
%
IL(DC)
Ω
Ω
Ω
to the ball
Notes
1, 2
1, 2
1, 2
3
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