MT48H8M32LFB5-10 IT Micron Technology Inc, MT48H8M32LFB5-10 IT Datasheet - Page 36

• Manufacturer Part Number: MT48H8M32LFB5-10 IT
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 23: PRECHARGE Command
Figure 24: Power-Down
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
1. Maintain NOP input conditions for a minimum of 100us.
2. Issue PRECHARGE commands for all banks.
3. Issue two or more AUTO REFRESH commands.
In order to exit deep power-down mode, CKE must be asserted high. After exiting, the
following sequence is needed in order to enter a new command:
The values of the MODE REGISTER and EXTENDED MODE REGISTER will be retained
upon exit deep power down.
COMMAND
CKE
CLK
All banks idle
Enter power-down mode.
t CKS
A0-A9, A11
NOP
BA0,1
RAS#
CAS#
WE#
CKE
CLK
A10
CS#
Input buffers gated off
36
HIGH
VALID ADDRESS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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Exit power-down mode.
Bank Selected
All Banks
ADDRESS
BANK
256Mb: x32 Mobile SDRAM
> t CKS
DON’T CARE
NOP
©2003 Micron Technology, Inc. All rights reserved.
DON’T CARE
ACTIVE
Operation
t RCD
t RAS
t RC