MT48V4M32LFB5-8 XT:G Micron Technology Inc, MT48V4M32LFB5-8 XT:G Datasheet - Page 64

• Manufacturer Part Number: MT48V4M32LFB5-8 XT:G
• Description: IC SDRAM 128MBIT 125MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48V4M32LFB5-8 XT:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 43:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
A0–A9, A11
COMMAND
BA0, BA1
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
READ – Without Auto Precharge
ACTIVE
ROW
ROW
BANK
T0
t CMH
t CKH
t AH
t AH
t AH
t CK
Notes:
t RCD
t RAS
t RC
T1
NOP
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. x16: A9 and A11 = “Don’t Care.”
x32: A8, A9, and A11 = “Don’t Care.”
See Table 17 on page 53.
DISABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m
BANK
T2
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
t AC
64
T4
D
NOP
OUT
t OH
t AC
m
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
T5
OUT
NOP
t OH
m+1
t AC
128Mb: x16, x32 Mobile SDRAM
SINGLE BANKS
ALL BANKS
PRECHARGE
BANK(S)
D
T6
OUT
t OH
m+2
t RP
t AC
©2001 Micron Technology, Inc. All rights reserved.
D
T7
OUT
NOP
t OH
Timing Diagrams
m+3
t HZ
ACTIVE
BANK
ROW
ROW
T8
DON’T CARE
UNDEFINED