MT48V4M32LFB5-8 XT:G Micron Technology Inc, MT48V4M32LFB5-8 XT:G Datasheet - Page 73

• Manufacturer Part Number: MT48V4M32LFB5-8 XT:G
• Description: IC SDRAM 128MBIT 125MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48V4M32LFB5-8 XT:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 52:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
COMMAND
A0–A9, A11
BA0, BA1
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Single Write – Without Auto Precharge
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
t AH
t AH
t AH
Notes:
t CK
t RCD
t RAS
t RC
T1
1. For this example, BL = 1, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. x16: A9 and A11 = “Don’t Care.”
4. PRECHARGE command not allowed or
NOP
x32: A8, A9, and A11 = “Don’t Care.”
See Table 17 on page 53.
DISABLE AUTO PRECHARGE
t CMS
t CL
t DS
COLUMN m 3
T2
WRITE
BANK
D
IN
t CMH
t CH
t DH
m
t WR
2
NOP 4
T3
73
IN
NOP 4
m> and the PRECHARGE command regardless of frequency.
T4
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RAS would be violated.
PRECHARGE
SINGLE BANK
ALL BANKS
T5
BANK
128Mb: x16, x32 Mobile SDRAM
t RP
T6
NOP
©2001 Micron Technology, Inc. All rights reserved.
ACTIVE
BANK
ROW
T7
Timing Diagrams
NOP
T8
DON’T CARE