MT47H32M16BN-25E IT:D TR Micron Technology Inc, MT47H32M16BN-25E IT:D TR Datasheet - Page 114
![IC DDR2 SDRAM 512MBIT 84FBGA](/photos/7/23/72318/mfg557-84-fbga_sml.jpg)
MT47H32M16BN-25E IT:D TR
Manufacturer Part Number
MT47H32M16BN-25E IT:D TR
Description
IC DDR2 SDRAM 512MBIT 84FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H32M16BN-25E IT:D TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
84-FBGA
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
400ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
295mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 64: WRITE-to-READ
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Command
DQS, DQS#
DQS, DQS#
DQS, DQS#
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
Address
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE
Bank a,
Col b
T0
WL - t DQSS
Notes:
WL ± t DQSS
WL + t DQSS
NOP
T1
1.
2. Subsequent rising DQS signals must align to the clock within
3. DI b = data-in for column b; DO n = data-out from column n.
4. BL = 4, AL = 0, CL = 3; thus, WL = 2.
5. One subsequent element of data-in is applied in the programmed order following DI b.
6.
7. A10 is LOW with the WRITE command (auto precharge is disabled).
8. The number of clock cycles required to meet
t
quired between module ranks.
t
greater.
DI
b
WTR is required for any READ following a WRITE to the same device, but it is not re-
WTR is referenced from the first positive CK edge after the last data-in pair.
NOP
T2
DI
b
DI
b
T2n
2
NOP
T3
2
2
T3n
NOP
T4
114
t WTR 1
T5
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Bank a,
READ
T6
Col n
t
WTR is either 2 or
CL = 3
CL = 3
CL = 3
T7
NOP
Transitioning Data
© 2004 Micron Technology, Inc. All rights reserved.
t
DQSS.
t
WTR/
T8
NOP
t
CK, whichever is
T9
NOP
Don’t Care
WRITE
DI
DI
DI
T9n
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