MT47H32M16BN-25E IT:D TR Micron Technology Inc, MT47H32M16BN-25E IT:D TR Datasheet - Page 18

IC DDR2 SDRAM 512MBIT 84FBGA

MT47H32M16BN-25E IT:D TR

Manufacturer Part Number
MT47H32M16BN-25E IT:D TR
Description
IC DDR2 SDRAM 512MBIT 84FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr

Specifications of MT47H32M16BN-25E IT:D TR

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
84-FBGA
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
400ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
295mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 9: 60-Ball FBGA (8mm x 10mm) – x4, x8
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Solder ball material:
Pb-free – (SAC305) SnAgCu
Pb – (Eutectic) SnPbAg
Dimensions apply to solder
balls post-reflow on Ø0.33
NSMD ball pads.
60X Ø0.45
Seating
Note:
0.12 A
Plane
8 CTR
0.8 TYP
1. All dimensions are in millimeters.
A
9 8 7
6.4 CTR
8 ±0.15
0.8 TYP
3 2 1
A
B
C
D
E
F
G
H
J
K
L
0.8 ±0.1
18
Exposed
gold-plated pad
1.0mm (MAX) X
0.7mm (NOM)
nonconductive floating pad
10 ±0.15
Ball A1 ID
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
0.25 MIN
1.2 MAX
©2004 Micron Technology, Inc. All rights reserved.
Ball A1 ID
Packaging

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