MT47H32M16BN-5E:D TR Micron Technology Inc, MT47H32M16BN-5E:D TR Datasheet - Page 124

IC DDR2 SDRAM 512MBIT 5NS 84FBGA

MT47H32M16BN-5E:D TR

Manufacturer Part Number
MT47H32M16BN-5E:D TR
Description
IC DDR2 SDRAM 512MBIT 5NS 84FBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT47H32M16BN-5E:D TR

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1214-2
MT47H32M16BN-5E:D TR
Figure 79: ODT Timing for Entering and Exiting Power-Down Mode
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
CKE
Applicable modes
Applicable timing parameters
t
AOND/
Any mode except
self refresh mode
Synchronous
t
AOFD
First CKE latched LOW
t
ANPD (3
t
CKs)
Active power-down slow (asynchronous)
Precharge power-down (asynchronous)
Active power-down fast (synchronous)
t
AONPD/
t
AOND/
Synchronous or
t
Asynchronous
t
AOFPD (asynchronous)
AOFD (synchronous)
124
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
First CKE latched HIGH
t
AXPD (8
t
CKs)
©2004 Micron Technology, Inc. All rights reserved.
Any mode except
self refresh mode
t
AOND/
Synchronous
ODT Timing
t
AOFD

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