MT48H8M32LFB5-75:G TR Micron Technology Inc, MT48H8M32LFB5-75:G TR Datasheet - Page 48

• Manufacturer Part Number: MT48H8M32LFB5-75:G TR
• Description: IC SDRAM 256MBIT 132MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-75:G TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1328-2

Figure 17: Consecutive READ Bursts
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Note:
Command
Command
Address
Address
1. Each READ command can be issued to any bank. DQM is LOW.
CLK
CLK
DQ
DQ
T0
T0
Bank,
READ
READ
Col n
Bank,
Col n
CL = 2
CL = 3
T1
T1
NOP
NOP
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
48
T2
T2
NOP
NOP
D
OUT
n
T3
T3
NOP
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
D
n + 1
OUT
OUT
READ
T4
READ
T4
Bank,
Bank,
Col b
Col b
X = 1 cycle
D
n + 2
D
Transitioning data
OUT
OUT
X = 2 cycles
T5
T5
NOP
NOP
D
D
n + 3
OUT
OUT
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T6
T6
NOP
NOP
READ Operation
D
D
OUT
OUT
b
Don’t Care
T7
NOP
D
OUT