MT47H256M4HQ-187E:E TR Micron Technology Inc, MT47H256M4HQ-187E:E TR Datasheet - Page 61
MT47H256M4HQ-187E:E TR
Manufacturer Part Number
MT47H256M4HQ-187E:E TR
Description
IC DDR2 SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H256M4HQ-187E:E TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (256M x 4)
Speed
1.875ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Organization
256Mx4
Density
1Gb
Address Bus
17b
Access Time (max)
350ps
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
190mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1426-2
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Figure 25: Tangent Line for
Table 30: DDR2-400/533
All units are shown in picoseconds
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
(V/ns)
Slew
Rate
DQ
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
t
125
83
4.0 V/ns
DS
Δ
0
–
–
–
–
–
–
t
DH
45
21
Δ
0
–
–
–
–
–
–
t
125
–11
Notes:
83
3.0 V/ns
DS
Δ
0
–
–
–
–
–
t
–14
Hold slew rate
rising signal
DH
45
21
Δ
Vil(dc) MAX
t
0
–
–
–
–
–
Vih(dc) MIN
Vil(ac) MAX
Vih(ac) MIN
DS,
1. For all input signals, the total
Vref(dc)
t
VddQ
sheet value to the derating value listed in Table 30 (page 61).
t
125
–11
–25
IH
t
83
2.0 V/ns
DS
CK#
Δ
DH Derating Values with Differential Strobe
0
–
–
–
–
Vss
CK
=
t
–14
–31
DC to Vref
Tangent line (Vref[dc] - Vil[dc] MAX)
DH
45
21
Δ
0
–
–
–
–
region
DQS, DQS# Differential Slew Rate
t
–13
–31
DS
95
12
1.8 V/ns
Δ
1
–
–
–
–
ΔTR
t
–19
–42
t IS
DH
33
12
–2
Tangent
Δ
–
–
–
–
line
t
61
–19
–43
DS
24
13
–1
1.6 V/ns
Δ
–
–
–
–
t IH
t
DS and
ΔTR
t
–30
–59
DH
24
10
–7
Hold slew rate
falling signal
Δ
–
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Nominal
t
t
–31
–74
DH required is calculated by adding the data
DS
25
11
–7
1.4 V/ns
line
Δ
–
–
–
–
=
1Gb: x4, x8, x16 DDR2 SDRAM
t
–18
–47
–89
Tangent line (Vih[dc] MIN - Vref[dc])
t IS
DH
22
Δ
–
–
–
5
–
Tangent
DC to Vref
line
region
–127 –140 –115 –128 –103 –116
Input Slew Rate Derating
t
–19
–62
t IH
DS
23
1.2 V/ns
Δ
5
–
–
–
–
ΔTF
ΔTF
Nominal
t
–35
–77
DH
17
–6
Δ
–
–
–
–
line
© 2004 Micron Technology, Inc. All rights reserved.
t
–50
17
1.0 V/ns
DS
–7
Δ
–
–
–
–
–
t
–23
–65
DH
Δ
–
–
–
–
–
6
t
–38
DS
0.8 V/ns
Δ
5
–
–
–
–
–
–
t
–11
–53
DH
Δ
–
–
–
–
–
–
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