MT47H256M4HQ-187E:E TR Micron Technology Inc, MT47H256M4HQ-187E:E TR Datasheet - Page 98
MT47H256M4HQ-187E:E TR
Manufacturer Part Number
MT47H256M4HQ-187E:E TR
Description
IC DDR2 SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H256M4HQ-187E:E TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (256M x 4)
Speed
1.875ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Organization
256Mx4
Density
1Gb
Address Bus
17b
Access Time (max)
350ps
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
190mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1426-2
- Current page: 98 of 131
- Download datasheet (10Mb)
Figure 53: Bank Read – with Auto Precharge
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Bank address
Command 1
DQS, DQS#
DQS, DQS#
Case 2: t AC (MAX) and t DQSCK (MAX)
Case 1: t AC (MIN) and t DQSCK (MIN)
Address
DQ 6
DQ 6
CK#
CKE
A10
DM
CK
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4, RL = 4 (AL = 1, CL = 3) in the case shown.
3. The DDR2 SDRAM internally delays auto precharge until both
4. Enable auto precharge.
5. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level,
6. DO n = data-out from column n; subsequent elements are applied in the programmed
t CK
these times.
have been satisfied.
but to when the device begins to drive or no longer drives, respectively.
order.
t RCD
t RAS
t RC
NOP 1
T2
t CH
t CL
READ 2,3
Bank x
Col n
4
T3
AL = 1
prefetch
4-bit
NOP 1
98
T4
t RTP
NOP 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
t LZ (MIN)
t LZ (MAX)
CL = 3
Internal
precharge
1Gb: x4, x8, x16 DDR2 SDRAM
5
NOP 1
T6
5
t RPRE
t LZ (MIN)
t LZ (MAX)
t RPRE
NOP 1
Transitioning Data
T7
t DQSCK (MIN)
t RP
DO
t DQSCK (MAX)
t AC (MIN)
n
t AC (MAX)
DO
© 2004 Micron Technology, Inc. All rights reserved.
n
T7n
t
RAS (MIN) and
NOP 1
T8
t HZ (MIN)
t HZ (MAX)
T8n
t RPST
t RPST
Don’t Care
Bank x
ACT
RA
5
RA
t
RTP (MIN)
5
READ
Related parts for MT47H256M4HQ-187E:E TR
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
IC DDR2 SDRAM 1GBIT 5NS 60FBGA
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC DDR2 SDRAM 1GBIT 3NS 60FBGA
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 64MBIT 5.5NS 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 64MBIT 200MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 256MBIT 133MHZ 90VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC SDRAM 256MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
Part Number:
Description:
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer:
Micron Technology Inc
Datasheet: