MT41J512M8THU-15E:A Micron Technology Inc, MT41J512M8THU-15E:A Datasheet - Page 122
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MT41J512M8THU-15E:A
Manufacturer Part Number
MT41J512M8THU-15E:A
Description
IC DDR3 SDRAM 4GBIT 82FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT41J256M8JE-187EA.pdf
(181 pages)
Specifications of MT41J512M8THU-15E:A
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
4G (512M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
82-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 58: Multipurpose Register (MPR) Block Diagram
Table 72:
MPR Functional Description
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D4.fm - Rev G 2/09 EN
MR3[2]
MPR
0
1
(see Table 73 on page 123)
MPR Functional Description of MR3 Bits
MPR READ Function
Notes:
“Don’t Care”
MR3[1:0]
A[1:0]
1. A predefined data pattern can be read out of the MPR with an external READ command.
2. MR3[2] defines whether the data flow comes from the memory core or the MPR. When the
The MPR JEDEC definition allows for either a prime DQ (DQ0 on a x4 and a x8; on a x16,
DQ0 = lower byte and DQ8 = upper byte) to output the MPR data with the remaining
DQs driven LOW or for all DQs to output the MPR data . The MPR readout supports fixed
READ burst and READ burst chop (MRS and OTF via A12/BC#) with regular READ laten-
cies and AC timings applicable, provided the DLL is locked as required.
MPR addressing for a valid MPR read is as follows:
• A[1:0] must be set to “00” as the burst order is fixed per nibble
• A2 selects the burst order:
• For burst chop 4 cases, the burst order is switched on the nibble base and:
• Burst order bit 0 (the first bit) is assigned to LSB, and burst order bit 7 (the last bit) is
• A[9:3] are a “Don’t Care”
• A10 is a “Don’t Care”
Memory core
– BL8, A2 is set to “0,” and the burst order is fixed to 0, 1, 2, 3, 4, 5, 6, 7
– A2 = 0; burst order = 0, 1, 2, 3
– A2 = 1; burst order = 4, 5, 6, 7
assigned to MSB
data flow is defined, the MPR contents can be read out continuously with a regular READ or
RDAP command.
DQ, DM, DQS, DQS#
Enable MPR mode, subsequent READ/RDAP commands defined by bits 1 and 2
MR3[2] = 1 (MPR on)
MR3[2] = 0 (MPR off)
All subsequent READs come from the DRAM memory array
All subsequent WRITEs go to the DRAM memory array
122
Normal operation, no MPR transaction
predefined data for READs
Multipurpose register
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Function
2Gb: x4, x8, x16 DDR3 SDRAM
©2006 Micron Technology, Inc. All rights reserved.
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