MT41J512M8THU-187E:A Micron Technology Inc, MT41J512M8THU-187E:A Datasheet - Page 28

• Manufacturer Part Number: MT41J512M8THU-187E:A
• Description: IC DDR3 SDRAM 4GBIT 82FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT41J512M8THU-187E:A

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 4G (512M x 8)
• Speed: 533MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 82-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Table 8:
Figure 12: Thermal Measurement Point
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D2.fm - Rev G 2/09 EN
Thermal Characteristics
Notes:
1. MAX operating case temperature. T
2. A thermal solution must be designed to ensure the DRAM device does not exceed the maxi-
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
4. If T
5. The thermal resistance data is based off of a number of samples from multiple lots and
Parameter/Condition
Operating case temperature
Junction-to-case (TOP)
L
Figure 12).
mum T
operation.
interval refresh rate. The use of SRT or ASR (if available) must be enabled.
should be viewed as a typical number.
C
(L/2)
exceeds 85°C, the DRAM must be refreshed externally at 2X refresh, which is a 3.9µs
C
during operation.
W
28
78-ball “HX”
82-ball “JE”
96-ball “HA”
(W/2)
C
is measured in the center of the package (see
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T c test point
0 to 85
0 to 95
2Gb: x4, x8, x16 DDR3 SDRAM
Value
TBD
TBD
1.6
Thermal Characteristics
Units
°C/W
°C
°C
©2006 Micron Technology, Inc. All rights reserved.
Symbol
ΘJC
T
T
C
C
1, 2, 3, 4
C
Notes
1, 2, 3
during
5