MT41J512M8THU-187E:A Micron Technology Inc, MT41J512M8THU-187E:A Datasheet - Page 44

• Manufacturer Part Number: MT41J512M8THU-187E:A
• Description: IC DDR3 SDRAM 4GBIT 82FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT41J512M8THU-187E:A

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 4G (512M x 8)
• Speed: 533MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 82-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 13:
AC Overshoot/Undershoot Specification
Table 26:
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D3.fm - Rev G 2/09 EN
0.925V
0.850V
0.780V
0.765V
0.750V
0.735V
0.720V
0.650V
0.575V
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 14 on page 45)
Maximum peak amplitude allowed for undershoot area
(see Figure 15 on page 45)
Maximum overshoot area above V
Maximum undershoot area below V
Minimum V
Control and Address Pins
Input Signal
V
V
V
V
IH
IH
IL
IL
(
(
(
(
DC
AC
Notes:
AC
DC
)
)
)
)
IL
and V
1. Numbers in diagrams reflect nominal values.
IH
levels
DD
SS
(see Figure 14 on page 45)
(see Figure 15 on page 45)
0.925V
0.850V
0.780V
0.765V
0.750V
0.735V
0.720V
0.650V
0.575V
–0.40V
1.90V
1.50V
0.0V
44
V
IL
DDR3-800 DDR3-1066
and V
0.67 Vns
0.67 Vns
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.4V
0.4V
Electrical Specifications – DC and AC
IH
levels with ringback
2Gb: x4, x8, x16 DDR3 SDRAM
0.5 Vns
0.5 Vns
0.4V
0.4V
©2006 Micron Technology, Inc. All rights reserved.
DDR3-1333
0.4 Vns
0.4 Vns
0.4V
0.4V
V
V
pulse width
V
V
V
V
V
V
pulse width
V
V
V
V
SS
DD
DD
IH
IH
IL
IL
SS
REF
REF
REF
REF
(
(
(
(
DC
AC
Q + 0.4V narrow
Q
- 0.4V narrow
AC
DC
DDR3-1600
+ AC noise
+ DC error
- DC error
- AC noise
)
)
)
)
0.33 Vns
0.33 Vns
0.4V
0.4V