CY7C1339B-100AC Cypress Semiconductor Corp, CY7C1339B-100AC Datasheet - Page 11

• Manufacturer Part Number: CY7C1339B-100AC
• Description: IC SRAM 4MBIT 100MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1339B-100AC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1092

Document #: 38-05141 Rev. *A
Switching Waveforms
Write Cycle Timing
Notes:
14. WE is the combination of BWE, BW
15. WDx stands for Write Data to Address X.
Data In
ADD
CE
CE
ADSC
ADV
WE
CE
OE
CLK
ADSP
GW
1
3
2
t
t
t
CES
ADS
CES
t
AS
High-Z
t
CES
WD1
t
ADVS
[14, 15]
t
t
t
Single Write
ADH
CEH
t
ADS
DS
ADV Must Be Inactive for ADSP Write
t
t
CYC
t
t
CEH
t
CEH
AH
WS
1a
1a
t
t
t
ADVH
WH
t
DH
ADH
[3:0]
, and GW to define a Write cycle (see Write Cycle Descriptions table).
WD2
t
CH
= UNDEFINED
t
WS
t
CL
2a
t
WH
Burst Write
ADSP ignored with CE
2b
CE
1
masks ADSP
= DON’T CARE
2c
1
inactive
2d
ADSC initiated Write
WD3
3a
Pipelined Write
Unselected with CE
High-Z
CY7C1339B
Unselected
2
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