M27C801-120B1 STMicroelectronics, M27C801-120B1 Datasheet - Page 14

IC OTP 8MBIT 120NS 32DIP

M27C801-120B1

Manufacturer Part Number
M27C801-120B1
Description
IC OTP 8MBIT 120NS 32DIP
Manufacturer
STMicroelectronics
Datasheet

Specifications of M27C801-120B1

Format - Memory
EPROMs
Memory Type
OTP EPROM
Memory Size
8M (1M x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1690-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M27C801-120B1
Manufacturer:
ST
Quantity:
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Part Number:
M27C801-120B1
Manufacturer:
ST
0
DC and AC characteristics
14/24
Figure 6.
Table 6.
1. T
2. Sampled only, not 100% tested.
Table 7.
1. T
2. V
3. Maximum DC voltage on Output is V
Symbol
V
I
I
V
V
Symbol
I
IH
I
CC1
CC2
I
V
I
CC
LO
PP
A
OH
A
CC
C
LI
OL
IL
C
(3)
= 25 °C, f = 1 MHz.
= 0 to 70 °C or –40 to 85 °C; V
OUT
IN
must be applied simultaneously with or before V
Input leakage current
Output leakage current
Supply current
Supply current (Standby) TTL
Supply current (Standby)
CMOS
Program current
Input low voltage
Input high voltage
Output low voltage
Output high voltage TTL
Output high voltage CMOS
AC testing load circuit
Capacitance
Read mode DC characteristics
Input capacitance
Output capacitance
Parameter
Parameter
C L = 30pF for High Speed
C L = 100pF for Standard
C L includes JIG capacitance
(1) (2)
DEVICE
UNDER
TEST
CC
CC
= 5 V ± 10%.
+0.5V.
Test condition
I
OUT
V
E = V
1.3V
V
OUT
IN
Test condition
0V V
E > V
I
0V V
= 0 mA, f = 5 MHz
PP
(1) (2)
OH
I
I
= 0 V
OL
OH
V
= 0 V
IL
1N914
3.3k
PP
and removed simultaneously or after V
E = V
= –100 µA
, GV
= 2.1 mA
C L
= –1 mA
CC
OUT
IN
= V
– 0.2V
PP
IH
V
CC
V
CC
= V
CC
IL
OUT
,
AI01823B
Min.
V
CC
Min.
–0.3
3.6
2
– 0.7
Max.
12
6
V
Max.
CC
±10
±10
100
0.8
0.4
35
10
PP
1
+ 1
.
M27C801
Unit
pF
pF
Unit
mA
mA
V
V
V
V
V
A
A
A
A

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