M27C801-120B1 STMicroelectronics, M27C801-120B1 Datasheet - Page 16

IC OTP 8MBIT 120NS 32DIP

M27C801-120B1

Manufacturer Part Number
M27C801-120B1
Description
IC OTP 8MBIT 120NS 32DIP
Manufacturer
STMicroelectronics
Datasheet

Specifications of M27C801-120B1

Format - Memory
EPROMs
Memory Type
OTP EPROM
Memory Size
8M (1M x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1690-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M27C801-120B1
Manufacturer:
ST
Quantity:
9
Part Number:
M27C801-120B1
Manufacturer:
ST
0
DC and AC characteristics
Table 9.
1. T
2. V
3. Speed obtained with High Speed AC measurement conditions.
4. Sampled only, not 100% tested.
Figure 7.
16/24
Symbol Alt
t
t
GHQZ
EHQZ
t
t
t
t
GLQV
AXQX
AVQV
ELQV
A
CC
(4)
(4)
= 0 to 70 °C or –40 to 85 °C; V
must be applied simultaneously with or before V
t
ACC
t
t
t
t
t
OH
CE
OE
DF
DF
Q0-Q7
A0-A19
E
G
Read mode AC characteristics
Read mode AC waveforms
Address valid to output valid
Chip Enable low to output valid
Output Enable low to output valid
Chip Enable high to output Hi-Z
Output Enable high to output Hi-Z
Address transition to output
transition
Parameter
CC
= 5 V ± 10%.
tAVQV
tELQV
tGLQV
VALID
(1) (2)
PP
GV
GV
GV
GV
condition
and removed simultaneously or after V
E = V
E = V
E = V
E = V
PP
PP
PP
PP
Test
= V
= V
= V
= V
IL
IL
IL
IL
,
,
IL
IL
IL
IL
Min.
0
0
0
-55
tAXQX
(3)
Max.
55
55
30
25
25
tEHQZ
tGHQZ
Min.
VALID
0
0
0
-80/-90
PP
Max.
80
80
40
35
35
.
Min
AI01583B
0
0
0
-100
Hi-Z
Max.
100
100
50
40
40
M27C801
Unit
ns
ns
ns
ns
ns
ns

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