M29F800DB70N6 NUMONYX, M29F800DB70N6 Datasheet - Page 29
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M29F800DB70N6
Manufacturer Part Number
M29F800DB70N6
Description
IC FLASH 8MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Datasheet
1.M29F800DB70N6.pdf
(53 pages)
Specifications of M29F800DB70N6
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1710
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29F800DB70N6
Manufacturer:
ST
Quantity:
1 760
Company:
Part Number:
M29F800DB70N6
Manufacturer:
ST
Quantity:
2 000
M29F800DT
Table 11.
1. Sampled only, not 100% tested.
Figure 10. Read Mode AC waveforms
Symbol
I
CC4
V
I
I
I
V
V
V
V
I
CC1
CC2
CC3
V
I
I
LKO
LO
OH
ID
OL
LI
A0-A18/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
IH
ID
IL
BYTE
(1)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Supply Current (Program/Erase)
Input Low voltage
Input High voltage
Output Low voltage
Output High voltage TTL CMOS
Identification voltage
Identification Current
Program/Erase Lockout Supply voltage
DC characteristics
tELBL/tELBH
Parameter
tAVQV
tBHQV
tELQX
tELQV
tGLQX
tGLQV
E = V
Program/Erase Controller active
tAVAV
VALID
E = V
CC
0V V
Test condition
IL
±0.2V, RP = V
I
0V V
OH
, G = V
I
OL
A9 = V
E = V
= –2.5mA
= 5.8mA
OUT
IN
IH
IH
tBLQZ
V
ID
, f = 6MHz
V
CC
CC
CC
VALID
±0.2V
tGHQX
tGHQZ
DC and AC parameters
–0.5
11.5
Min
2.4
3.2
2
tEHQZ
V
CC
Max
0.45
12.5
150
100
0.8
4.2
±1
±1
20
20
2
+ 0.5
tEHQX
tAXQX
Unit
AI06154
mA
mA
mA
29/53
µ
µ
µ
µ
V
V
V
V
V
V
A
A
A
A