M29W320DB70N6 NUMONYX, M29W320DB70N6 Datasheet - Page 35

• Manufacturer Part Number: M29W320DB70N6
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W320DB70N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-1714

Table 23. CFI Query System Interface Information
1Ch
1Dh
1Bh
1Eh
1Fh
x16
20h
21h
22h
23h
24h
25h
26h
Address
3Ah
3Ch
3Eh
4Ah
4Ch
36h
38h
40h
42h
44h
46h
48h
x8
00B5h
00C5h
000Ah
0027h
0036h
0004h
0000h
0000h
0005h
0000h
0004h
0000h
Data
V
V
V
V
Typical timeout per single byte/word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for byte/word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
CC
CC
PP
PP
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
BCD value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
Description
n
n
times typical
ms
n
n
n
times typical
ms
M29W320DT, M29W320DB
times typical
n
n
times typical
µs
n
µs
512µs
Value
11.5V
12.5V
16µs
2.7V
3.6V
16s
NA
NA
NA
NA
1s
35/44