M29W800DB90N6T STMicroelectronics, M29W800DB90N6T Datasheet - Page 16
![IC FLASH 8MBIT 90NS 48TSOP](/photos/7/26/72669/497-48-tsop_series_sml.jpg)
M29W800DB90N6T
Manufacturer Part Number
M29W800DB90N6T
Description
IC FLASH 8MBIT 90NS 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.M29W800DT90N6.pdf
(41 pages)
Specifications of M29W800DB90N6T
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
90ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1717-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
M29W800DT, M29W800DB
Table 5. Commands, 8-bit mode, BYTE = V
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
16/41
Read/Reset
Auto Select
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Read CFI Query
Chip Erase
Block Erase (64 Kbytes)
Erase Suspend Latency Time
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
Data Retention
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
Command
Parameter
6+
1
3
3
4
3
2
2
6
1
1
1
Addr Data
AAA
AAA
AAA
AAA
AAA
AAA
AA
X
X
X
X
X
1st
IL
AA
AA
AA
AA
AA
AA
F0
A0
B0
90
30
98
or DQ15 when BYTE is V
Addr
555
555
555
555
555
555
PA
X
2nd
IL
Data
PD
55
55
55
55
00
55
55
Addr
AAA
AAA
AAA
AAA
AAA
X
Bus Write Operations
IH
.
3rd
100,000
Min
20
Data
F0
A0
90
20
80
80
Addr
CC
CC
AAA
AAA
PA
.
after 100,00 program/erase cycles.
4th
Typ
Data
0.8
12
15
10
12
PD
AA
AA
6
(1, 2)
Addr
555
555
5th
Max
200
60
25
60
30
6
Data
(4)
55
55
(3)
(3)
(3)
(4)
(3)
(2)
Addr
AAA
BA
cycles
6th
years
Unit
µs
µs
s
s
s
s
Data
10
30