M29W800DB STMICROELECTRONICS [STMicroelectronics], M29W800DB Datasheet

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M29W800DB

Manufacturer Part Number
M29W800DB
Description
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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FEATURES SUMMARY
September 2004
SUPPLY VOLTAGE
ACCESS TIMES: 45, 70, 90ns
PROGRAMMING TIME
19 MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
ERASE SUSPEND and RESUME MODES
UNLOCK BYPASS PROGRAM COMMAND
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
V
and Read
10µs per Byte/Word typical
1 Boot Block (Top or Bottom Location)
2 Parameter and 16 Main Blocks
Embedded Byte/Word Program
algorithms
Read and Program another Block during
Erase Suspend
Faster Production/Batch Programming
64 bit Security Code
Standby and Automatic Standby
Manufacturer Code: 0020h
Top Device Code M29W800DT: 22D7h
Bottom Device Code M29W800DB:
225Bh
CC
= 2.7V to 3.6V for Program, Erase
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Figure 1. Packages
3V Supply Flash Memory
TFBGA48 (ZA)
TFBGA48 (ZE)
TSOP48 (N)
12 x 20mm
SO44 (M)
6 x 9 mm
6 x 8mm
M29W800DB
M29W800DT
FBGA
FBGA
1/42

Related parts for M29W800DB

M29W800DB Summary of contents

Page 1

... Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W800DT: 22D7h – Bottom Device Code M29W800DB: 225Bh September 2004 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory Figure 1. Packages M29W800DT M29W800DB SO44 (M) ...

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... M29W800DT, M29W800DB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. SO Connections Figure 4. TSOP Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 5. TFBGA Connections (Top view through package Figure 6. Block Addresses (x8 Figure 7. Block Addresses (x16 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Address Inputs (A0-A18 Data Inputs/Outputs (DQ0-DQ7) ...

Page 3

... Figure 17.TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Outline Table 17. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Mechanical Data . 27 Figure 18.TFBGA48 6x9mm – 6x8 ball array – 0.80mm pitch, Bottom View Package Outline . . . . 28 M29W800DT, M29W800DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 IH ...

Page 4

... PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Table 20. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 APPENDIX A.BLOCK ADDRESS TABLE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 21. Top Boot Block Addresses, M29W800DT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 22. Bottom Boot Block Addresses, M29W800DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 APPENDIX B.COMMON FLASH INTERFACE (CFI Table 23. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 24. CFI Query Identification String Table 25. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 26 ...

Page 5

... DQ15A– BYTE V CC AI05470B M29W800DT, M29W800DB 6 and 7, Block Addresses. Address Inputs Data Inputs/Outputs Data Inputs/Outputs Data Input/Output or Address Input Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output (not available on SO44 package) Byte/Word Organization Select ...

Page 6

... M29W800DT, M29W800DB Figure 3. SO Connections RP 1 A18 2 A17 M29W800DT M29W800DB DQ0 15 DQ8 16 DQ1 17 DQ9 18 DQ2 19 DQ10 20 DQ3 21 DQ11 22 6/42 Figure 4. TSOP Connections A10 39 A11 38 A12 37 A13 36 A14 ...

Page 7

... A17 NC A6 A18 NC A10 A11 DQ0 DQ2 DQ5 DQ7 DQ12 DQ14 DQ8 DQ10 DQ9 DQ11 V CC DQ13 DQ1 DQ3 DQ4 DQ6 M29W800DT, M29W800DB 6 A13 A12 A14 A15 A16 BYTE DQ15 A– AI00656 7/42 ...

Page 8

... M29W800DT, M29W800DB Figure 6. Block Addresses (x8) M29W800DT Top Boot Block Addresses (x8) FFFFFh 16 KByte FC000h FBFFFh 8 KByte FA000h F9FFFh 8 KByte F8000h F7FFFh 32 KByte F0000h EFFFFh 64 KByte E0000h 1FFFFh 64 KByte 10000h 0FFFFh 64 KByte 00000h Note: Also see APPENDIX A., Tables 21 8/42 Bottom Boot Block Addresses (x8) ...

Page 9

... Bottom Boot Block Addresses (x16) 7FFFFh 78000h 77FFFh 70000h 0FFFFh 08000h 07FFFh 04000h 03FFFh Total KWord Blocks 03000h 02FFFh 02000h 01FFFh 00000h and 22 for a full listing of the Block Addresses. M29W800DT, M29W800DB M29W800DB 32 KWord 32 KWord Total KWord Blocks 32 KWord 16 KWord 4 KWord 4 KWord 8 KWord AI05464 9/42 ...

Page 10

... M29W800DT, M29W800DB SIGNAL DESCRIPTIONS See Figure 2., Logic Diagram, 1., Signal Names, for a brief overview of the sig- nals connected to this device. Address Inputs (A0-A18). The Address Inputs select the cells in the memory array to access dur- ing Bus Read operations. During Bus Write opera- tions they control the commands sent to the Command Interface of the internal state machine ...

Page 11

... Chip Enable should CC2 ± 0.2V. For the Standby current CC Table 11., DC Characteristics. , for Program or Erase operations un- CC3 2 and 3, Bus Operations. APPENDIX C. Data Inputs/Outputs DQ14-DQ8 DQ7-DQ0 Hi-Z Data Output Hi-Z Data Input Hi D7h (M29W800DT Hi-Z 5Bh (M29W800DB) ± 0.2V The CC2 Hi-Z Hi-Z 20h 11/42 ...

Page 12

... The Device Code can be read using a Bus Read operation with address bits may be set to either V Device Code for the M29W800DT is 22D7h and for the M29W800DB is 225Bh. The Block Protection Status of each block can be read using a Bus Read operation with the block ...

Page 13

... A Read/Reset command must be issued to re- set the error condition and return to Read mode. The Block Erase Command sets all of the bits in the unprotected selected blocks to ’1’. All previous data in the selected blocks is lost. M29W800DT, M29W800DB Table 6. All Bus Read opera- 13/42 ...

Page 14

... M29W800DT, M29W800DB Erase Suspend Command. The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to for value) of the Erase Suspend Command being issued ...

Page 15

... AA 2AA 55 555 A0 AA 2AA 55 555 2AA 55 555 80 AA 2AA 55 555 DQ15 when BYTE M29W800DT, M29W800DB 4th 5th Addr Data Addr Data Addr PA PD 555 AA 2AA 55 555 555 AA 2AA 55 BA 6th Data 10 30 15/42 ...

Page 16

... M29W800DT, M29W800DB Table 5. Commands, 8-bit mode, BYTE = V Command Addr Data 1 X Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Unlock Bypass 3 AAA Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase 6 AAA Block Erase 6+ AAA Erase Suspend 1 X Erase Resume 1 X Read CFI Query ...

Page 17

... DQ6 toggles for approximately 100µs. If any at- tempt is made to program a protected block or a suspended block, the operation is aborted, no er- M29W800DT, M29W800DB ror is signalled and DQ6 toggles for approximately 1µs. Figure 9., Data Toggle Flowchart, gives an exam- ple of how to use the Data Toggle Bit ...

Page 18

... M29W800DT, M29W800DB Table 7. Status Register Bits Operation Address Program Any Address Program During Erase Any Address Suspend Program Error Any Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block Erasing Block ...

Page 19

... Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality docu- ments. Parameter (1,2) +2V during transition and for less than 20ns during transitions. CC M29W800DT, M29W800DB Min Max Unit –50 125 °C –65 150 ° ...

Page 20

... M29W800DT, M29W800DB DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement Table 9. Operating and AC Measurement Conditions Parameter ...

Page 21

... ±0.2V ±0.2V CC Program/Erase Controller active I = 1.8mA OL µ –100 tAVAV VALID tAVQV tELQV tELQX tGLQX tGLQV tBHQV tBLQZ M29W800DT, M29W800DB Min Max Unit µ ±1 µ ± µ 100 20 mA –0.5 0.8 V 0. –0 ...

Page 22

... M29W800DT, M29W800DB Table 12. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC (1) t Chip Enable Low to Output Transition t LZ ELQX t t Chip Enable Low to Output Valid ELQV CE (1) t Output Enable Low to Output Transition ...

Page 23

... Program/Erase Valid to RB Low t BUSY WHRL High to Chip Enable Low VCHEL VCS CC Note: 1. Sampled only, not 100% tested. tAVAV VALID tAVWL tELWL tGHWL tWLWH tDVWH Parameter M29W800DT, M29W800DB tWLAX tWHEH tWHGL tWHWL tWHDX VALID tWHRL M29W800D 45 70 Min 45 70 Min 0 0 Min 30 45 ...

Page 24

... M29W800DT, M29W800DB Figure 14. Write AC Waveforms, Chip Enable Controlled A0-A18/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable Low to Chip Enable Low WLEL Chip Enable Low to Chip Enable High ...

Page 25

... PLPX RP ( Low to Read Mode t READY PLYH ( Rise Time VIDR PHPHH Note: 1. Sampled only, not 100% tested. tPHWL, tPHEL, tPHGL tPLYH Parameter ID M29W800DT, M29W800DB tRHWL, tRHEL, tRHGL tPHPHH AI06870 M29W800D Min Min Min 500 500 ...

Page 26

... M29W800DT, M29W800DB PACKAGE MECHANICAL Figure 16. SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Outline Note: Drawing is not to scale. Table 16. SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data Symbol Typ 2.30 b 0.40 C ...

Page 27

... M29W800DT, M29W800DB inches Typ Min 0.0039 0.0020 0.0394 0.0374 0.0087 0.0067 0.0039 0.4724 0.4685 0.7874 0.7795 0.7244 0.7205 0.0197 – ...

Page 28

... M29W800DT, M29W800DB Figure 18. TFBGA48 6x9mm – 6x8 ball array – 0.80mm pitch, Bottom View Package Outline FE BALL "A1" Note: Drawing is not to scale. Table 18. TFBGA48 6x9mm – 6x8 active ball array – 0.80mm pitch, Package Mechanical Data Symbol Typ A A1 ...

Page 29

... M29W800DT, M29W800DB A2 BGA-Z32 inches Typ Min 0.0102 0.0138 0.2362 0.2323 0.1575 – 0.3150 0.3110 0.2205 – 0.0315 – 0.0394 – 0.0472 – ...

Page 30

... M29W800DT, M29W800DB PART NUMBERING Table 20. Ordering Information Scheme Example: Device Type M29 Operating Voltage 2.7 to 3.6V CC Device Function 800D = 8 Mbit (x8/x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed 45 = 45ns Package M = SO44 N = TSOP48 TFBGA48: 6x9mm, 0.80mm pitch ZE = TFBGA48: 6x8mm, 0 ...

Page 31

... M29W800DT, M29W800DB Address Range Address Range (x8) F0000h-FFFFFh 78000h-7FFFFh E0000h-EFFFFh 70000h-77FFFh D0000h-DFFFFh 68000h-6FFFFh C0000h-CFFFFh 60000h-67FFFh B0000h-BFFFFh 58000h-5FFFFh A0000h-AFFFFh 50000h-57FFFh 90000h-9FFFFh 48000h-4FFFFh 80000h-8FFFFh 40000h-47FFFh 70000h-7FFFFh 38000h-3FFFFh 60000h-6FFFFh 30000h-37FFFh ...

Page 32

... M29W800DT, M29W800DB APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the mem- ory ...

Page 33

... Typical timeout for minimum size write buffer program = 2 Typical timeout per individual block erase = 2 Typical timeout for full chip erase = 2 Maximum timeout for byte/word program = 2 Maximum timeout for write buffer program = 2 Maximum timeout per individual block erase = 2 Maximum timeout for chip erase = 2 M29W800DT, M29W800DB n µs n µ ...

Page 34

... M29W800DT, M29W800DB Table 26. Device Geometry Definition Address Data x16 x8 27h 4Eh 0014h 28h 50h 0002h 29h 52h 0000h 2Ah 54h 0000h 2Bh 56h 0000h 2Ch 58h 0004h 2Dh 5Ah 0000h 2Eh 5Ch 0000h 2Fh 5Eh 0040h 30h 60h 0000h 31h 62h ...

Page 35

... Simultaneous Operations not supported Burst Mode not supported supported Page Mode not supported page word page word Data XXXX XXXX 64 bit: unique device number XXXX XXXX M29W800DT, M29W800DB Description Value "P" "R" "I" "1" "0" Yes ...

Page 36

... M29W800DT, M29W800DB APPENDIX C. BLOCK PROTECTION Block protection can be used to prevent any oper- ation from modifying the data stored in the Flash. Each Block can be protected individually. Once protected, Program and Erase operations on the block fail to change the data. There are three techniques that can be used to ...

Page 37

... Wait 4µ Wait 100µ A0 Wait 4µ Wait 60ns Read DATA DATA NO = 01h YES PASS M29W800DT, M29W800DB ++ YES AI03469 FAIL 37/42 ...

Page 38

... M29W800DT, M29W800DB Figure 21. Programmer Equipment Chip Unprotect Flowchart NO = 1000 38/42 START PROTECT ALL BLOCKS CURRENT BLOCK = 0 A6, A12, A15 = Wait 4µ Wait 10ms ADDRESS = CURRENT BLOCK ADDRESS A1 Wait 4µ ...

Page 39

... Wait 100µs WRITE 40h ADDRESS = BLOCK ADDRESS Wait 4µs READ DATA ADDRESS = BLOCK ADDRESS DATA NO = 01h YES ISSUE READ/RESET COMMAND PASS ISSUE READ/RESET M29W800DT, M29W800DB ++ YES COMMAND FAIL AI03471 39/42 ...

Page 40

... M29W800DT, M29W800DB Figure 23. In-System Equipment Chip Unprotect Flowchart ++ 1000 ISSUE READ/RESET COMMAND FAIL 40/42 START PROTECT ALL BLOCKS CURRENT BLOCK = WRITE 60h ANY ADDRESS WITH WRITE 60h ANY ADDRESS WITH ...

Page 41

... Table 9.Operating and AC Measurement Conditions 23-Apr-2004 6.0 Figure 3., SO Connections 16-Sep-2004 7.0 45ns speed class added. Revision Details Figure 15. Table 6., Program, Erase Times and Program, Erase Endurance Table 9., Operating and AC Measurement Table 20., Ordering Information updated. M29W800DT, M29W800DB modified) Cycles, Conditions. Scheme. updated for 70ns speed option. 41/42 ...

Page 42

... M29W800DT, M29W800DB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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