CY7C1352F-100AC Cypress Semiconductor Corp, CY7C1352F-100AC Datasheet - Page 3

• Manufacturer Part Number: CY7C1352F-100AC
• Description: IC SRAM 4.5MBIT 100MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1352F-100AC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4.5M (256K x 18)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document #: 38-05211 Rev. *C
Pin Definitions
A0, A1, A
BW
WE
ADV/LD
CLK
CE
CE
CE
OE
CEN
ZZ
DQs
DQP
MODE
V
V
DD
DDQ
Name
1
2
3
[A:B]
[A:B]
4,11,20,27,54,6
82,99,100
8,9,12,13,
37,36,32,
33,34,35,
44,45,46,
47,48,49,
50,80,81,
58,59,62,
63,68,69,
18,19,22,
15,41,65,
1,70, 77
72,73,
TQFP
93,94
74,24
88
85
89
98
97
92
86
87
64
23
31
91
Asynchronous
Asynchronous
Power Supply
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Input-Clock
I/O Power
Strap pin
Supply
Input-
Input-
Input-
Input-
Input-
Input-
Input-
Input-
Input-
Input-
Input
I/O-
I/O-
I/O
Address Inputs used to select one of the 256K address locations. Sampled
at the rising edge of the CLK. A
Byte Write Inputs, active LOW. Qualified with WE to conduct writes to the
SRAM. Sampled on the rising edge of CLK.
Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is
active LOW. This signal must be asserted LOW to initiate a write sequence.
Advance/Load Input. Used to advance the on-chip address counter or load a
new address. When HIGH (and CEN is asserted LOW) the internal burst counter
is advanced. When LOW, a new address can be loaded into the device for an
access. After being deselected, ADV/LD should be driven LOW in order to load
a new address.
Clock Input. Used to capture all synchronous inputs to the device. CLK is
qualified with CEN. CLK is only recognized if CEN is active LOW.
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used
in conjunction with CE
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE
Output Enable, asynchronous input, active LOW. Combined with the
synchronous logic block inside the device to control the direction of the I/O pins.
When LOW, the DQ pins are allowed to behave as outputs. When deasserted
HIGH, DQ pins are three-stated, and act as input data pins. OE is masked during
the data portion of a write sequence, during the first clock when emerging from
a deselected state, when the device has been deselected.
Clock Enable Input, active LOW. When asserted LOW the Clock signal is
recognized by the SRAM. When deasserted HIGH the Clock signal is masked.
Since deasserting CEN does not deselect the device, CEN can be used to extend
the previous cycle when required.
ZZ “sleep” Input. This active HIGH input places the device in a non-time-critical
“sleep” condition with data integrity preserved. For normal operation, this pin has
to be LOW or left floating. ZZ pin has an internal pull-down.
Bidirectional Data I/O Lines. As inputs, they feed into an on-chip data register
that is triggered by the rising edge of CLK. As outputs, they deliver the data
contained in the memory location specified by the address during the clock rise
of the read cycle. The direction of the pins is controlled by OE and the internal
control logic. When OE is asserted LOW, the pins can behave as outputs. When
HIGH, DQ
automatically three-stated during the data portion of a write sequence, during the
first clock when emerging from a deselected state, and when the device is
deselected, regardless of the state of OE.
Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to
DQ
Mode Input. Selects the burst order of the device.
When tied to Gnd selects linear burst sequence. When tied to V
selects interleaved burst sequence.
Power supply inputs to the core of the device.
Power supply for the I/O circuitry.
s
. During write sequences, DQP
s
and DQP
2
1
[A:B]
and CE
and CE
1
and CE
are placed in a three-state condition. The outputs are
2
3
to select/deselect the device.
to select/deselect the device.
[1:0]
3
to select/deselect the device.
Description
[A:B]
are fed to the two-bit burst counter.
is controlled by BW
[A:B]
CY7C1352F
DD
correspondingly.
or left floating
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