TE28F320C3TD70A NUMONYX, TE28F320C3TD70A Datasheet - Page 39
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TE28F320C3TD70A
Manufacturer Part Number
TE28F320C3TD70A
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Specifications of TE28F320C3TD70A
Rohs Status
RoHS non-compliant
Format - Memory
FLASH
Memory Type
Advanced + Boot Block FLASH
Memory Size
32M (2M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Other names
855788
TE28F320C3TD70
TE28F320C3TD70
8.0
8.1
Datasheet
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
NOTES:
1. OE# may be delayed up to t
2. Sampled, but not 100% tested.
3. See
4. See
#
slew rate.
Table 13. Read Operations—8 Mbit Density
Figure 8, “Read Operation Waveform” on page
Figure 11, “AC Input/Output Reference Waveform” on page 49
t
t
t
t
t
t
t
t
t
t
Sym
AVAV
AVQV
ELQV
GLQV
PHQV
ELQX
GLQX
EHQZ
GHQZ
OH
Read Cycle Time
Address to Output Delay
CE# to Output Delay
OE# to Output Delay
RP# to Output Delay
CE# to Output in Low Z
OE# to Output in Low Z
CE# to Output in High Z
OE# to Output in High Z
Output Hold from
Address, CE#, or OE#
Change, Whichever
Occurs First
AC Characteristics
AC Read Characteristics
Parameter
ELQV–
t
GLQV
Product
Density
V
CC
after the falling edge of CE# without impact on t
Note
1,3,4
1,3,4
2,3,4
2,3,4
2,3,4
2,3,4
2,3,4
3,4
3,4
3,4
3.0 V – 3.6 V
Min
80
42.
0
0
0
Max
150
Intel
80
80
30
20
20
90 ns
£
for timing measurements and maximum allowable input
2.7 V – 3.6 V
Min
Advanced+ Boot Block Flash Memory (C3)
90
0
0
0
Max
150
90
90
30
20
20
8 Mbit
3.0 V – 3.6 V
Min
100
0
0
0
ELQV
.
Max
100
100
150
30
20
20
110 ns
2.7 V – 3.6 V
Min
110
0
0
0
Max
110
110
150
30
20
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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