CY7C199C-12VI Cypress Semiconductor Corp, CY7C199C-12VI Datasheet - Page 6

• Manufacturer Part Number: CY7C199C-12VI
• Description: IC SRAM 256KBIT 12NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199C-12VI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1568-5

Document #: 38-05408 Rev. *C
Timing Waveforms
Data Retention Waveform
Read Cycle No. 1
Notes:
Data Retention Characteristics
10. WE is HIGH for Read Cycle.
V
I
t
t
8. L-version only.
9. Device is continuously selected. OE = V
CCDR
CDR
R
Parameter
DR
Address
Data Out
CE
V
CC
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CC
[11, 10]
for Data Retention
Description
Previous Data Valid
t
CDR
IL
= CE.
[8]
V
V
CC
IN
t
OHA
≥ V
= V
CC
DR
DATA RETENTION MODE
– 0.3V or V
=2.0V, CE ≥ V
t
AA
Condition
IN
≤ 0.3V
CC
t
RC
– 0.3V,
Min.
200
2.0
–
0
Data Valid
t
R
ALL
CY7C199C
Max.
150
–
–
–
Page 6 of 13
Unit
µA
ns
µs
V