CY7C199C-12VI Cypress Semiconductor Corp, CY7C199C-12VI Datasheet - Page 8

• Manufacturer Part Number: CY7C199C-12VI
• Description: IC SRAM 256KBIT 12NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199C-12VI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1568-5

Document #: 38-05408 Rev. *C
Timing Waveforms
Write Cycle No. 2 (CE Controlled)
Write Cycle No. 3 (WE Controlled, OE Low)
Notes:
16. This cycle is CE controlled.
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
18. The cycle is WE controlled, OE LOW. The minimum write cycle time is the sum of t
Data In/Out
Address
Address
WE
In/Out
CE
Data
CE
WE
High Z
(continued)
Undefined
see footnotes
[14, 16, 17]
t
SA
[18]
t
SA
t
HZWE
t
AW
t
SCE
t
t
AW
WC
HZWE
t
PWE
t
WC
and t
Data-In Valid
t
SD
t
SD
SCE
Data-In Valid
t
.
SD
t
HD
t
LZWE
t
t
t
HD
HA
HA
CY7C199C
See Footnotes
Undefined
High Z
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