M25P40-VMP6 STMicroelectronics, M25P40-VMP6 Datasheet - Page 42

IC FLASH 4MBIT 40MHZ 8VFQFPN

M25P40-VMP6

Manufacturer Part Number
M25P40-VMP6
Description
IC FLASH 4MBIT 40MHZ 8VFQFPN
Manufacturer
STMicroelectronics
Datasheet

Specifications of M25P40-VMP6

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
40MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3599

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DC and AC parameters
42/51
Table 19.
1. Details of how to find the date of marking are given in Application Note, AN1995.
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
6. It is 30µs in devices produced with the “X” process technology. Details of how to find the process letter on
Symbol
t
t
t
t
t
t
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
SLCH
CHSL
SHSL
CLQV
CLQX
HLCH
CHHL
DP
CL
the device marking are given in the Application note AN1995.
f
f
CH
C
R
(2)
(3)
(2)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(5)
(5)
+ t
CL
t
t
t
t
t
Alt.
t
t
CSS
DSU
t
CSH
t
CLH
t
CLL
must be greater than or equal to 1/ f
DIS
f
DH
HO
t
HZ
LZ
C
V
AC Characteristics (40MHz Operation, Device Grade 6)
40MHz available for products marked since week 20 of 2004, only
Clock Frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDSR, WRSR
Clock Frequency for READ instructions
Clock High Time
Clock Low Time
Clock Rise Time
Clock Fall Time
S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
Data In Setup Time
Data In Hold Time
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
Output Disable Time
Clock Low to Output Valid
Output Hold Time
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
S High to Deep Power-down Mode
S High to Standby Power mode without
Electronic Signature Read
S High to Standby Power mode with Electronic
Signature Read
Test conditions specified in
(4)
(4)
Parameter
(peak to peak)
(peak to peak)
C
Table 10
and
Min.
D.C.
D.C.
100
100
0.1
0.1
11
11
20
5
5
2
5
5
5
0
5
5
5
5
Table 17
Typ.
1.8 or 30
3 or 30
Max.
(1)
40
20
9
9
9
9
3
(6)
(6)
M25P40
MHz
MHz
Unit
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs

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