NAND256W4A0AN6E STMicroelectronics, NAND256W4A0AN6E Datasheet - Page 35
![IC FLASH 256MBIT 48TSOP](/photos/7/26/72669/497-48-tsop_series_sml.jpg)
NAND256W4A0AN6E
Manufacturer Part Number
NAND256W4A0AN6E
Description
IC FLASH 256MBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND128W3A2BN6E.pdf
(56 pages)
Specifications of NAND256W4A0AN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (16Mx16)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Other names
497-3614
Table 19. DC Characteristics, 3V Devices
Symbol
I
OL
V
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
512Mb and 1Gb Dual Die devices
512Mb and 1Gb Dual Die devices
128Mb, 256Mb, 512Mb devices
128Mb, 256Mb, 512Mb devices
V
DD
Stand-By Current (CMOS)
Stand-By Current (CMOS)
Output High Voltage Level
Output Low Voltage Level
Operating
Output Low Current (RB)
Output Leakage Current
Stand-by Current (TTL),
Stand-by Current (TTL)
Current
Input Leakage Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Parameter
Sequential
Program
Erase
Read
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
E=V
V
E=V
V
Test Conditions
OUT
IN
t
RLRL
I
OH
I
E=V
= 0 to V
IH
WP=0/V
OL
V
IL,
= 0 to V
OL
, WP=0V/V
= 400µA
I
= 2.1mA
OUT
minimum
DD
= 0.4V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
DD
Min
2.0
2.4
0.3
8
-
-
-
-
-
-
-
-
-
-
-
Typ
10
10
10
10
20
10
-
-
-
-
-
-
-
-
-
V
DD
Max
100
±10
±10
0.8
0.4
2.5
20
20
20
50
1
2
-
+0.3
Unit
35/56
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V