NAND256W3A2BZA6E NUMONYX, NAND256W3A2BZA6E Datasheet - Page 35

• Manufacturer Part Number: NAND256W3A2BZA6E
• Description: IC FLASH 256MBIT 55VFBGA
• Manufacturer: NUMONYX

Specifications of NAND256W3A2BZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 55-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 497-5039; 497-5039

NAND128-A, NAND256-A
7.5
7.6
7.6.1
7.6.2
Error correction code
An error correction code (ECC) can be implemented in the NAND flash memories to identify
and correct errors in the data.
The recommendation is to implement 23 bits of ECC for every 4096 bits in the device.
Figure 19. Error detection
Hardware simulation models
Behavioral simulation models
Denali Software Corporation models are platform-independent functional models designed
to assist customers in performing entire system simulations (typical VHDL/Verilog). These
models describe the logic behavior and timings of NAND flash devices, and, therefore, allow
software to be developed before hardware.
IBIS simulations models
IBIS (I/O buffer information specification) models describe the behavior of the I/O buffers
and electrical characteristics of flash devices.
These models provide information such as AC characteristics, rise/fall times, and package
mechanical data, all of which are measured or simulated at voltage and temperature ranges
wider than those allowed by target specifications.
IBIS models simulate PCB connections and can resolve compatibility issues when
upgrading devices. They can be imported into SPICETOOLS.
New ECC generated
XOR previous ECC
22 bit data = 0
with new ECC
during read
YES
All results
No Error
= zero?
NO
11 bit data = 1
Correctable
YES
= zero?
>1 bit
Error
NO
1 bit data = 1
ECC Error
ai08332
Software algorithms
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