W19B320ABT7H Winbond Electronics, W19B320ABT7H Datasheet - Page 4

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W19B320ABT7H

Manufacturer Part Number
W19B320ABT7H
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
Winbond Electronics
Datasheet

Specifications of W19B320ABT7H

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-20°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
W19B320ABT7H
Manufacturer:
WINBOND
Quantity:
813
Part Number:
W19B320ABT7H
Manufacturer:
WINBOND/华邦
Quantity:
20 000
1. GENERAL DESCRIPTION
The W19B320AT/B is a 32Mbit, 2.7~3.6-volt flexible bank CMOS flash memory organized as 4M x 8
or 2M × 16 bits. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears
on DQ7-DQ0. The device can be programmed and erased in-system with a standard 3.0-volt power
supply. A 12-volt V
program/erase operations with extremely low current consumption (compared to other comparable
3-volt flash memory products). The device can also be programmed and erased by using standard
EPROM programmers.
2. FEATURES
Performance
• 2.7~3.6-volt write (program and erase)
• Fast write operation
• Read access time: 70 ns
• Typical program/erase cycles:
• Twenty-year data retention
• Ultra low power consumption
Architecture
• Flexible Bank architectures
• Security Sector Size: 256 Bytes
• Simultaneous Read/write operation
− Consist of four banks that customer can
− Bank 1: 4M; Bank 2: 12M;
− The Security Sector is an OTP; once the
operations
− 100K
− Sector erases time: 0.4 Sec (typical)
− Chip erases time: 49 Sec (typical)
− Byte programming time: 5 μs (typical)
− Active current (Read): 10 mA (typical)
− Active current (Read while Erase/Program):
− Standby current: 0.2 μA (typical)
− Data can be continuously read from one bank
group the bank size as they needed
Bank 3: 12M; Bank 4: 4M
sector is programmed, it cannot be erased
21 mA (typical)
while processing erase/program functions in
other bank with zero latency
PP
is not required. The unique cell architecture of the W19B320AT/B results in fast
- 4 -
• JEDEC standard byte-wide and word-wide
• Manufactured on WinStack 0.18μm process
• Available packages: 48-pin TSOP and 48-ball
Software Features
• Compatible with common Flash Memory
• Erase Suspend/Erase Resume
• End of program detection
• Unlock Bypass Program command
Hardware Features
• Ready/#Busy output (RY/#BY)
• Hardware reset pin (#RESET)
pinouts
technology
TFBGA (6x8mm)
Interface (CFI) specification
− Flash device parameters stored directly on
− Allows software driver to identify and use a
− Suspends erase operations to allow
− Software method: Toggle bit/Data polling
− Reduces overall programming time when
− Detect program or erase cycle completion
− Reset the internal state machine to the read
the device
variety of different current and future Flash
products
programming in same bank
issuing multiple program command
sequences
mode
W19B320AT/B

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