CY7C1426AV18-167BZXC Cypress Semiconductor Corp, CY7C1426AV18-167BZXC Datasheet - Page 9

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CY7C1426AV18-167BZXC

Manufacturer Part Number
CY7C1426AV18-167BZXC
Description
IC SRAM 36MBIT 167MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1426AV18-167BZXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
36M (4M x 9)
Speed
167MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1426AV18-167BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document Number: 38-05614 Rev. *C
DLL
These chips utilize a Delay Lock Loop (DLL) that is designed
to function between 80 MHz and the specified maximum clock
frequency. During power-up, when the DOFF is tied HIGH, the
DLL gets locked after 1024 cycles of stable clock. The DLL can
also be reset by slowing or stopping the input clock K and K
for a minimum of 30 ns. However, it is not necessary for the
Application Example
Truth Table
Write Cycle:
Load address on the
rising edge of K;
input write data on
two consecutive K
and K rising edges.
Read Cycle:
Load address on the
rising edge of K; wait
one and a half cycle;
read data on two
consecutive C and C
rising edges.
NOP: No Operation L-H
Standby: Clock
Stopped
Notes:
1. The above application shows four QDR-II being used.
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW,
3. Device will power-up deselected and the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.
5. “t” represents the cycle at which a Read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line
8. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.
9. This signal was HIGH on previous K clock rise. Initiating consecutive Read or Write operations on consecutive K clock rises is not permitted. The device will
“t” clock cycle.
charging symmetrically.
ignore the second Read or Write request.
Operation
[2, 3, 4, 5, 6, 7]
MASTER
ASIC)
(CPU
BUS
or
L-H
L-H
Stopped X
K
CLKIN/CLKIN#
Delayed K#
DATA OUT
[1]
Delayed K
Source K#
DATA IN
Source K
Address
BWS#
WPS#
RPS#
H
L
H
RPS WPS
[9]
[8]
Vt
R
R
L
X
H
X
[9]
R = 50ohms
D(A) at K(t + 1) ↑ D(A + 1) at K(t +1) ↑ D(A + 2) at K(t + 2) ↑ D(A + 3) at K(t + 2) ↑
Q(A) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑ Q(A + 2) at C(t + 2) ↑ Q(A + 3) at C(t + 3) ↑
D = X
Q = High-Z
Previous State
D
A
represents rising edge.
Vt = Vddq/2
R
P
S
#
DQ
W
P
#
SRAM #1
S
W
B
S
#
C C#
CQ/CQ#
K
D = X
Q = High-Z
Previous State
ZQ
K#
DLL to be specifically reset in order to lock the DLL to the
desired frequency. The DLL will automatically lock 1024 clock
cycles after a stable clock is presented.the DLL may be
disabled by applying ground to the DOFF pin. For information
refer to the application note “DLL Considerations in
QDRII/DDRII/QDRII+/DDRII+”.
Q
R = 250ohms
DQ
D
A
R
D = X
Q = High-Z
Previous State
Vt
Vt
R
P
S
#
W
SRAM #4
P
#
S
W
B
S
#
DQ
C C#
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
CY7C1411AV18
CQ/CQ#
K
ZQ
K#
Q
D = X
Q = High-Z
Previous State
R = 250ohms
Page 9 of 28
DQ
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