CY7C1470V33-200AXCT Cypress Semiconductor Corp, CY7C1470V33-200AXCT Datasheet - Page 32

• Manufacturer Part Number: CY7C1470V33-200AXCT
• Description: IC SRAM 72MBIT 200MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470V33-200AXCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 38-05289 Rev. *M
Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33, 72-Mbit (2 M × 36/4 M × 18/1 M × 72)
Pipelined SRAM with NoBL™ Architecture
Document Number: 38-05289
Revision
*H
*M
*K
*J
*L
*I
2756998
2903057
3033272
3052882
416221
472335
ECN
09/19/2010
10/08/2010
Change
Orig. of
RXU
VKN
VKN
NJY
Submission
04/01/2010
See ECN
See ECN
08/28/09
Date
NJY
NJY
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed Three-state to Tristate
Changed the description of I
Current on page# 18
Changed the I
to –30 μA and 5 μA
Changed the I
to –5 μA and 30 μA
Changed V
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated the Ordering Information Table
Corrected the typo in the pin configuration for 209-Ball FBGA pinout
(Corrected the ball name for H9 to V
Added the Maximum Rating for Supply Voltage on V
Changed t
Switching Characteristics table.
Updated the Ordering Information table.
Included Soft Error Immunity Data
Modified Ordering Information table by including parts that are available and
modified the disclaimer for the Ordering information.
Updated Package Diagram for spec 51-85165.
Updated Ordering Information
Updated Package Diagrams
Added
Added
Minor edits and updated in new template.
Removed obsolete parts.
Ordering Code
Acronyms
TH
DDQ
, t
X
X
TL
current values of MODE on page # 18 from –5 μA and 30 μA
current values of ZZ on page # 18 from –30 μA and 5 μA
<
from 25 ns to 20 ns and t
VDD
and
to V
Units of
Definitions.
Description of Change
DDQ
X
from Input Load Current to Input Leakage
Measure.
< V
DD
SS
in page #18
from V
TDOV
SSQ
from 5 ns to 10 ns in TAP AC
).
DDQ
CY7C1470V33
CY7C1472V33
CY7C1474V33
Relative to GND.
Page 32 of 33
[+] Feedback