CY14E064L-SZ35XI Cypress Semiconductor Corp, CY14E064L-SZ35XI Datasheet

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... Cypress Semiconductor Corporation Document Number: 001-06543 Rev Kbit ( nvSRAM Functional Description The Cypress CY14E064L is a fast static RAM with a nonvol- atile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while independent, nonvolatile data resides in the highly reliable QuantumTrap cell ...

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... V Power Supply AutoStore Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM to CAP nonvolatile elements. Document Number: 001-06543 Rev 28-SOIC 5 6 Top View 7 8 (Not To Scale Description CY14E064L HSB DQ7 DQ6 DQ5 DQ4 DQ3 Page [+] Feedback ...

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... IO lines left LOW, internal circuitry turns off the output buffers t LOW. Document Number: 001-06543 Rev. *E AutoStore Operation The CY14E064L stores data to nvSRAM using one of three storage operations: 1. Hardware store activated by HSB 2. Software store activated by an address sequence 3. AutoStore on device power down AutoStore operation is a unique feature of QuantumTrap technology and is enabled by default on the CY14E064L ...

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... RECALL request is latched. When V SWITCH once again exceeds the sense voltage of V cycle is automatically initiated and takes t If the CY14E064L WRITE state at the end of power up RECALL, the SRAM data is corrupted. To help avoid this situation Kohm resistor is connected either between WE and system V ...

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... STORE, the WRITE is inhibited until a negative transition detected. This protects against inadvertent writes during power up or brown out conditions. Noise Considerations The CY14E064L is a high speed memory. It must have a high frequency bypass capacitor of approximately 0.1 µF connected between V and V using leads and traces that are as short ...

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... Document Number: 001-06543 Rev. *E When the CY14E064L is connected for AutoStore operation (system V connected and V crosses V CC attempts to pull HSB LOW. If HSB does not actually get below of at least 2.2V the part stops trying to pull HSB LOW and abort the IL STORE attempt. ...

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... Test Conditions = mA. = Max CC STORE – 0.2). All other inputs cycling Max CC STORE – 0.2). All others V < 0.2V or > Max, V < V < Max, V < V < > – CY14E064L + 2. 25°C) ................................................... 1.0W [1] .................................... 15 mA Min Max Unit Commercial – 0.2V). 2 μ μ 2 0 – ...

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... Input Rise and Fall Times (10% - 90%)........................ <5 ns Input and Output Timing Reference Levels ................... 1.5 V Document Number: 001-06543 Rev. *E Test Conditions T = 25° MHz 3 Test Conditions 5.0V Output 512Ω CY14E064L Max Unit 28-SOIC Unit °C/W TBD °C/W TBD For Tri-state Specs R1 963Ω R2 512Ω ...

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... If an SRAM Write does not take place since the last nonvolatile cycle, no STORE takes place. Document Number: 001-06543 Rev. *E Description Description . SWITCH CY14E064L 25 ns Part 45 ns Part Unit Min Max Min Max CY14E064L Unit Min Max μs 550 10 ms 4.0 4.5 V μs 150 Page [+] Feedback ...

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... Read and Write cycles in progress before HSB are given this amount of time to complete. 13 only applicable after t is complete. RESTORE STORE Document Number: 001-06543 Rev. *E [10,11 Part Min Description CY14E064L 45 ns Part Unit Max Min Max μ CY14E064L Unit Min Max 10 ms μs 1 700 300 ns Page [+] Feedback ...

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... Figure 6. SRAM Read Cycle 2: CE Controlled ADDRESS (DATA OUT) STANDBY ICC Note 14. HSB must remain HIGH during READ and WRITE cycles. Document Number: 001-06543 Rev DATA VALID [4,14 ACE t LZCE t DOE t LZOE t ACTIVE PU CY14E064L [ HZCE t HZOE DATA VALID Page [+] Feedback ...

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... SA WE DATA IN DATA OUT PREVIOUS DATA Figure 8. SRAM Write Cycle 2: CE Controlled ADDRESS DATA IN Note 15 must be greater than V during address transitions. IH Document Number: 001-06543 Rev. *E [14,15 SCE PWE DATA VALID t HZWE HIGH IMPEDANCE SCE PWE DATA VALID CY14E064L t LZWE Page [+] Feedback ...

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... Document Number: 001-06543 Rev. *E Figure 9. AutoStore/Power Up RECALL t VSBL t DELAY BROWN OUT BROWN OUT AutoStore TM NO STROKE (NO SRAM WRITES) NO RECALL NO RECALL (V DID NOT GO (V DID NOT BELOW V ) BELOW V ) RESET RESET CY14E064L t STORE BROWN OUT AutoStore TM RECALL WHEN V RETURNS CC ABOVE VSWITCH Page [+] Feedback ...

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... CE t GLAX OE DATA VALID DQ (DATA) t HLHX HSB (IN) t HLBL HSB (OUT) HIGH IMPEDANCE DATA VALID DQ (DATA OUT) Document Number: 001-06543 Rev ADDRESS # 6 DATA VALID Figure 11. Hardware STORE Cycle t STORE t DELAY CY14E064L [ STORE RECALL HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID Page [+] Feedback ...

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... Part Numbering Nomenclature 064 Pb-Free nvSRAM 14 - AutoStore + Software Store + Hardware Store Cypress Document Number: 001-06543 Rev. *E Option: T-Tape and Reel Blank - Std. Temperature Commercial (0 to 70°C) Package 28-SOIC Data Bus Voltage 5.0V CY14E064L Speed Density: 064 - 64 Kb Page [+] Feedback ...

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... Ordering Information Speed Package Diagram (ns) Ordering Code 25 CY14E064L-SZ25XCT CY14E064L-SZ25XC 25 CY14E064L-SZ25XIT CY14E064L-SZ25XI 35 CY14E064L-SZ35XCT CY14E064L-SZ35XC 35 CY14E064L-SZ35XIT CY14E064L-SZ35XI 45 CY14E064L-SZ45XCT CY14E064L-SZ45XC 45 CY14E064L-SZ45XIT CY14E064L-SZ45XI Package Diagrams Document Number: 001-06543 Rev. *E Package Type 001-10395 28-pin SOIC (Pb-Free) Commercial 001-10395 28-pin SOIC (Pb-Free) 001-10395 28-pin SOIC (Pb-Free) Industrial ...

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... Document History Page Document Title: CY14E064L 64 Kbit ( nvSRAM Document Number: 001-06543 Issue Orig. of REV. ECN NO. Date Change ** 427789 See ECN *A 437321 See ECN *B 472053 See ECN *C 503290 See ECN *D 1349963 See ECN UHA/SFV *E 2427986 See ECN © Cypress Semiconductor Corporation, 2006-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product ...