CY14E064L-SZ45XI Cypress Semiconductor Corp, CY14E064L-SZ45XI Datasheet - Page 8

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CY14E064L-SZ45XI

Manufacturer Part Number
CY14E064L-SZ45XI
Description
IC NVSRAM 64KBIT 45NS 28SOIC
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY14E064L-SZ45XI

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
64K (8K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC (8.77mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance
These parameters are guaranteed but not tested.
Thermal Resistance
[
AC Test Loads
AC Test Conditions
Input Pulse Levels .................................................. 0 V to 3 V
Input Rise and Fall Times (10% - 90%)........................ <5 ns
Input and Output Timing Reference Levels ................... 1.5 V
Document Number: 001-06543 Rev. *E
C
C
These parameters are guaranteed but not tested.
Parameter
IN
OUT
Θ
Θ
Output
JC
JA
Parameter
5.0V
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Description
30 pF
Input Capacitance
Output Capacitance
Description
R1 963W
Test conditions follow standard test methods and procedures
for measuring thermal impedance, per EIA / JESD51.
512Ω
R2
T
V
A
CC
Test Conditions
= 25°C, f = 1 MHz,
= 0 to 3.0 V
Test Conditions
Output
5.0V
5 pF
R1 963Ω
Max
8
7
28-SOIC
TBD
TBD
For Tri-state Specs
CY14E064L
512Ω
R2
Unit
pF
pF
°C/W
°C/W
Unit
Page 8 of 17
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