CY22E016L-SZ45XI Cypress Semiconductor Corp, CY22E016L-SZ45XI Datasheet - Page 7

• Manufacturer Part Number: CY22E016L-SZ45XI
• Description: IC NVSRAM 16KBIT 45NS 28SOIC
• Manufacturer: Cypress Semiconductor Corp
• Type: NVSRAMr

Specifications of CY22E016L-SZ45XI

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 16K (2K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Word Size: 8b
• Organization: 2Kx8
• Density: 16Kb
• Interface Type: Parallel
• Access Time (max): 45ns
• Operating Supply Voltage (typ): 5V
• Package Type: SOIC
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Operating Temp Range: -40C to 85C
• Pin Count: 28
• Mounting: Surface Mount
• Supply Current: 75mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Capacitance
These parameters are guaranteed but not tested.
Thermal Resistance
These parameters are guaranteed but not tested.
AC Test Loads
AC Test Conditions
Document Number: 001-06727 Rev. *E
Input Pulse Levels.................................................... 0V to 3V
Input Rise and Fall Times (10% - 90%)........................ <5 ns
Input and Output Timing Reference Levels.....................1.5V
C
C
IN
OUT
Parameter
Parameter
Output
Θ
Θ
JA
JC
5.0V
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Input Capacitance
Output Capacitance
30 pF
Description
Description
R1 963Ω
Test conditions follow standard test methods and proce-
dures for measuring thermal impedance, per EIA / JESD51.
T
V
A
CC
512Ω
= 25°C, f = 1 MHz,
= 0 to 3.0 V
R2
Output
Test Conditions
Test Conditions
5.0V
5 pF
R1 963Ω
28-SOIC
Specifications
Max
TBD
TBD
512Ω
For Tri-state
CY22E016L
8
7
R2
Page 7 of 14
°C/W
°C/W
Unit
Unit
pF
pF
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