M29F200BB70N6 NUMONYX, M29F200BB70N6 Datasheet - Page 31

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M29F200BB70N6

Manufacturer Part Number
M29F200BB70N6
Description
IC FLASH 2MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of M29F200BB70N6

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
2M (256K x 8 or 128K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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0
M29F200BT, M29F200BB
Table 13.
1. Sampled only, not 100% tested.
Figure 9.
Symbol
t
WHRL
t
t
t
t
t
t
t
t
t
t
t
VCHEL
t
WLWH
WHWL
DVWH
WHDX
WHEH
GHWL
WHGL
AVWL
WLAX
ELWL
AVAV
A0-A16/
A–1
E
G
W
DQ0-DQ7/
DQ8-DQ15
V CC
RB
(1)
Write ac characteristics, Write Enable controlled (T
–40 to 85 °C or –40 to 125 °C)
Write ac waveforms, Write Enable controlled
t
t
t
BUSY
t
t
t
WPH
t
t
t
t
t
OEH
Alt
t
VCS
WC
WP
CS
DS
DH
CH
AH
AS
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Input Valid to Write Enable High
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Address Valid to Write Enable Low
Write Enable Low to Address Transition
Output Enable High to Write Enable Low
Write Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
CC
tVCHEL
High to Chip Enable Low
tELWL
tGHWL
tAVWL
Parameter
tAVAV
VALID
tWLWH
tDVWH
tWHRL
VALID
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tWLAX
A
= 0 to 70 °C,
45
45
40
25
20
40
30
50
0
0
0
0
0
0
tWHEH
tWHGL
tWHWL
M29F200B
tWHDX
DC and ac parameters
50
50
40
25
20
40
30
50
0
0
0
0
0
0
70 / 90
70
45
30
20
45
30
50
AI01991
0
0
0
0
0
0
Unit
31/39
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µ
s

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