M29F200BB70N6E NUMONYX, M29F200BB70N6E Datasheet - Page 30

• Manufacturer Part Number: M29F200BB70N6E
• Description: IC FLASH 2MBIT 70NS 48TSOP
• Manufacturer: NUMONYX

Specifications of M29F200BB70N6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 2M (256K x 8 or 128K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and ac parameters
Table 12.
1. Sampled only, not 100% tested.
Figure 8.
30/39
Symbol
t
t
t
t
GHQZ
ELQX
GLQX
EHQZ
t
t
t
t
t
t
t
t
t
t
t
GHQX
GLQV
EHQX
AXQX
BHQV
AVQV
ELQV
ELBH
BLQZ
AVAV
ELBL
A0-A16/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
BYTE
(1)
(1)
(1)
(1)
Read ac characteristics (TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
Read Mode ac waveforms
t
t
t
t
t
FHQV
t
ELFH
FLQZ
ELFL
t
t
ACC
t
t
Alt
OLZ
t
t
t
OH
RC
CE
OE
HZ
DF
LZ
tELBL/tELBH
Address Valid to Next Address
Valid
Address Valid to Output Valid
Chip Enable Low to Output
Transition
Chip Enable Low to Output Valid
Output Enable Low to Output
Transition
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Chip Enable, Output Enable or
Address Transition to Output
Transition
Chip Enable to BYTE Low or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
Parameter
tBHQV
tAVQV
tELQX
tELQV
tGLQX
tGLQV
tAVAV
VALID
Test Condition
E = V
E = V
G = V
G = V
G = V
G = V
E = V
E = V
G = V
E = V
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
,
,
tBLQZ
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
VALID
tGHQX
tGHQZ
45
45
45
45
25
15
15
15
30
0
0
0
5
M29F200BT, M29F200BB
M29F200B
tEHQZ
50
50
50
50
30
18
18
15
30
0
0
0
5
70 / 90
70
70
70
30
20
20
20
30
0
0
0
5
tEHQX
tAXQX
AI02915
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns