M29F400BB55N6T NUMONYX, M29F400BB55N6T Datasheet - Page 20
![no-image](/images/manufacturer_photos/0/4/484/numonyx_sml.jpg)
M29F400BB55N6T
Manufacturer Part Number
M29F400BB55N6T
Description
IC FLASH 4MBIT 55NS 48TSOP
Manufacturer
NUMONYX
Datasheet
1.M29F400BB70N6T.pdf
(40 pages)
Specifications of M29F400BB55N6T
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
4M (512K x 8 or 256K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Command interface
4.11
4.12
4.13
20/40
Table 5.
1. X = Don’t Care, PA = Program Address, PD = Program Data, BA = Any address in the Block.
2. All values are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands;
A11-A17, DQ8-DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is V
DQ15 when BYTE is V
Read/Reset
After a Read/Reset command, read the memory as normal until another command is
issued.
Auto Select
After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase
After these commands read the Status Register until the Program/Erase Controller
completes and the memory returns to Read Mode. Add additional Blocks during Block
Erase Command with additional Bus Write Operations until Timeout Bit is set.
Read/Reset
Auto Select
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass
Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Command
Commands, 8-bit mode, BYTE = V
6+ AAA
1
3
3
4
3
2
2
6
1
1
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
AAA
AAA
AAA
AAA
AAA
X
X
X
X
X
IH
1st
.
AA
AA
AA
AA
AA
AA
A0
B0
F0
90
30
555
555
555
555
555
555
PA
X
2nd
PD
55
55
55
55
00
55
55
AAA
AAA
AAA
AAA
AAA
Bus Write Operations
X
3rd
IL
(1) (2)
A0
F0
90
20
80
80
AAA
AAA
PA
4th
PD
AA
AA
M29F400BT, M29F400BB
555
555
5th
55
55
AAA
BA
IL
6th
or
10
30