M29F800DB55N6E NUMONYX, M29F800DB55N6E Datasheet - Page 26
![no-image](/images/manufacturer_photos/0/4/484/numonyx_sml.jpg)
M29F800DB55N6E
Manufacturer Part Number
M29F800DB55N6E
Description
IC FLASH 8MBIT 55NS 48TSOP
Manufacturer
NUMONYX
Datasheet
1.M29F800DB70N6.pdf
(53 pages)
Specifications of M29F800DB55N6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Maximum rating
6
26/53
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings" table may
cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the
Operating sections of this specification is not implied. Refer also to the STMicroelectronics
SURE Program and other relevant quality documents.
Table 8.
1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.
2. Maximum voltage may overshoot to V
Symbol
T
T
V
V
V
BIAS
STG
CC
IO
ID
Absolute maximum ratings
Temperature under bias
Storage temperature
Input or Output voltage
Supply voltage
Identification voltage
Parameter
CC
(1)(2)
+2V during transition and for less than 20ns during transitions.
–0.6
–0.6
–0.6
Min
–50
–65
V
CC
Max
13.5
125
150
6
+0.6
M29F800DT
Unit
°C
°C
V
V
V