M29W200BB55N1 STMicroelectronics, M29W200BB55N1 Datasheet

IC FLASH 2MBIT 55NS 48TSOP

M29W200BB55N1

Manufacturer Part Number
M29W200BB55N1
Description
IC FLASH 2MBIT 55NS 48TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of M29W200BB55N1

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
2M (256K x 8 or 128K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number:
M29W200BB55N1
Manufacturer:
ST
0
September 2005
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W200BT: 0051h
– Bottom Device Code: M29W200BB 0057h
ECOPACK
Erase Suspend
®
PACKAGES AVAILABLE
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
Figure 1. Logic Diagram
A0-A16
TSOP48 (N)
12 x 20mm
RP
W
G
E
17
M29W200BB
M29W200BT
V CC
V SS
M29W200BB
M29W200BT
44
1
15
SO44 (M)
DQ0-DQ14
DQ15A–1
BYTE
RB
AI02948
1/22

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M29W200BB55N1 Summary of contents

Page 1

... Manufacturer Code: 0020h – Top Device Code M29W200BT: 0051h – Bottom Device Code: M29W200BB 0057h ® ECOPACK PACKAGES AVAILABLE September 2005 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory TSOP48 ( 20mm Figure 1. Logic Diagram A0-A16 RP M29W200BT M29W200BB ...

Page 2

... Read mode where it can be read in the same way as a ROM or EPROM. The M29W200B is fully backward compatible with the M29W200. The memory is divided into blocks that can be erased independently possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory ...

Page 3

... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi- tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual- ity documents. ...

Page 4

... Byte/Word Organization Select (BYTE). The Byte/ Word Organization Select pin is used to switch be- tween the 8-bit and 16-bit Bus modes of the mem- ory. When Byte/Word Organization Select is Low the memory is in 8-bit mode, when it is High the memory is in 16-bit mode Supply Voltage ...

Page 5

... Disable, Standby and Automatic Standby. See Tables 5 and 6, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Bus Read. Bus Read operations read from the memory cells, or specific registers in the Com- mand Interface ...

Page 6

... Code can be read using a Bus Read operation with and may be set to either V Code for STMicroelectronics is 0020h. The Device Code can be read using a Bus Read operation with address bits may be set to either V Device Code for the M29W200BT is 0051h and for the M29W200BB is 0057h. ...

Page 7

... Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional Bus Write Operations until Timeout Bit is set. ...

Page 8

... Once the Unlock Bypass command has been is- sued the memory will only accept the Unlock By- pass Program command and the Unlock Bypass Reset command. The memory can be read Read mode. Unlock Bypass Program Command. The lock Bypass Program command can be used to program one address in memory at a time ...

Page 9

... Reading from blocks that are being erased will output the Status Register also possible to enter the Auto Select mode: the memory will behave as in the Auto Select mode on all blocks until a Read/Reset command returns the memory to Erase Suspend mode. ...

Page 10

... DQ5 at ’1’. In both cases, a succes- sive Bus Read operation will show the bit is still ’0’. One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. DQ7 ...

Page 11

... Bus Read operations from addresses within the blocks being erased. Bus Read operations to ad- dresses within blocks not being erased will output the memory cell data Read mode. After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be used to ...

Page 12

M29W200BT, M29W200BB Table 11. AC Measurement Conditions Parameter V Supply Voltage CC Load Capacitance ( Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 6. AC Testing Input Output Waveform 3V 0V ...

Page 13

Table 13. DC Characteristics ( 70°C or –40 to 85°C) A Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) CC2 (1) Supply Current (Program/Erase) ...

Page 14

M29W200BT, M29W200BB Table 14. Read AC Characteristics ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC Chip Enable ...

Page 15

Table 15. Write AC Characteristics, Write Enable Controlled ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable Low to Write Enable Low ELWL ...

Page 16

M29W200BT, M29W200BB Table 16. Write AC Characteristics, Chip Enable Controlled ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable Low to Chip Enable ...

Page 17

Table 17. Reset/Block Temporary Unprotect AC Characteristics ( 70°C or –40 to 85°C) A Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t PHEL RH Low, Output Enable Low (1) t ...

Page 18

... Note: The last two characters of the ordering code may be replaced by a letter code for preprogrammed parts, otherwise devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de- vice, please contact the ST Sales Office nearest to you ...

Page 19

Table 19. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ A A1 0.100 A2 1.000 B 0.220 12.000 E 20.000 E1 18.400 e 0.500 L 0.600 L1 0.800 a ...

Page 20

M29W200BT, M29W200BB Table 20. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data Symbol Typ 2.30 b 0. 28.20 E 13.30 EH 16.00 e 1.27 L 0.80 a ...

Page 21

Table 21. Revision History Revision Date Number July 1999 03/30/00 07/28/00 19-Sep-2005 4.0 Revision Details First Issue Status Register bit DQ5 clarification Data Polling Flowchart diagram change (Figure 4) Data Toggle Flowchart diagram change (Figure 5) Program/Erase Times Maximum specification ...

Page 22

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...

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