M29W200BB70N1 NUMONYX, M29W200BB70N1 Datasheet
M29W200BB70N1
Specifications of M29W200BB70N1
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M29W200BB70N1 Summary of contents
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... Manufacturer Code: 0020h – Top Device Code M29W200BT: 0051h – Bottom Device Code: M29W200BB 0057h ® ECOPACK PACKAGES AVAILABLE September 2005 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory TSOP48 ( 20mm Figure 1. Logic Diagram A0-A16 RP M29W200BT M29W200BB ...
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... Read mode where it can be read in the same way as a ROM or EPROM. The M29W200B is fully backward compatible with the M29W200. The memory is divided into blocks that can be erased independently possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory ...
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... The memory is offered in TSOP48 (12 x 20mm) and SO44 packages and it is supplied with all the bits erased (set to ’1’). In order to meet environmental requirements, ST offers the M29W200B in ECOPACK ECOPACK packages are Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97 ...
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... Byte/Word Organization Select (BYTE). The Byte/ Word Organization Select pin is used to switch be- tween the 8-bit and 16-bit Bus modes of the mem- ory. When Byte/Word Organization Select is Low the memory is in 8-bit mode, when it is High the memory is in 16-bit mode Supply Voltage ...
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... Disable, Standby and Automatic Standby. See Tables 5 and 6, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Bus Read. Bus Read operations read from the memory cells, or specific registers in the Com- mand Interface ...
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... Bus Write operations can be used to issue the Read/Reset command. If the Read/Reset command is issued during a Block Erase operation or following a Programming or Erase error then the memory will take abort. During the abort period no valid data can be read from the memory. Issuing a Read/Reset command during a Block Erase operation will leave invalid data in the memory ...
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... Program, Unlock Bypass Program, Chip Erase, Block Erase. After these commands read the Status Register until the Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional Bus Write Operations until Timeout Bit is set. ...
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... Once the Unlock Bypass command has been is- sued the memory will only accept the Unlock By- pass Program command and the Unlock Bypass Reset command. The memory can be read Read mode. Unlock Bypass Program Command. The lock Bypass Program command can be used to program one address in memory at a time ...
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... Reading from blocks that are being erased will output the Status Register also possible to enter the Auto Select mode: the memory will behave as in the Auto Select mode on all blocks until a Read/Reset command returns the memory to Erase Suspend mode. ...
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... DQ5 at ’1’. In both cases, a succes- sive Bus Read operation will show the bit is still ’0’. One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. DQ7 ...
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... Bus Read operations from addresses within the blocks being erased. Bus Read operations to ad- dresses within blocks not being erased will output the memory cell data Read mode. After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be used to ...
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M29W200BT, M29W200BB Table 11. AC Measurement Conditions Parameter V Supply Voltage CC Load Capacitance ( Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 6. AC Testing Input Output Waveform 3V 0V ...
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Table 13. DC Characteristics ( 70°C or –40 to 85°C) A Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) CC2 (1) Supply Current (Program/Erase) ...
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M29W200BT, M29W200BB Table 14. Read AC Characteristics ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC Chip Enable ...
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Table 15. Write AC Characteristics, Write Enable Controlled ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable Low to Write Enable Low ELWL ...
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M29W200BT, M29W200BB Table 16. Write AC Characteristics, Chip Enable Controlled ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable Low to Chip Enable ...
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Table 17. Reset/Block Temporary Unprotect AC Characteristics ( 70°C or –40 to 85°C) A Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t PHEL RH Low, Output Enable Low (1) t ...
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... Note: The last two characters of the ordering code may be replaced by a letter code for preprogrammed parts, otherwise devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de- vice, please contact the ST Sales Office nearest to you ...
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Table 19. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ A A1 0.100 A2 1.000 B 0.220 12.000 E 20.000 E1 18.400 e 0.500 L 0.600 L1 0.800 a ...
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M29W200BT, M29W200BB Table 20. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data Symbol Typ 2.30 b 0. 28.20 E 13.30 EH 16.00 e 1.27 L 0.80 a ...
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Table 21. Revision History Revision Date Number July 1999 03/30/00 07/28/00 19-Sep-2005 4.0 Revision Details First Issue Status Register bit DQ5 clarification Data Polling Flowchart diagram change (Figure 4) Data Toggle Flowchart diagram change (Figure 5) Program/Erase Times Maximum specification ...
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M29W200BT, M29W200BB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from ...