NAND01GW3B2AN6F STMicroelectronics, NAND01GW3B2AN6F Datasheet - Page 37
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NAND01GW3B2AN6F
Manufacturer Part Number
NAND01GW3B2AN6F
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2AN6F
Manufacturer:
ST
Quantity:
101
NAND01G-B2B, NAND02G-B2C
Table 17.
Figure 15. Bad block management flowchart
Figure 16. Garbage collection
Operation
Invalid
Program
Valid
NAND flash failure modes
page
page
Erase
Read
Old area
Block Address =
START
Block 0
= FFh?
block?
Data
Last
END
YES
YES
NO
NO
(erased)
Free
page
Bad Block table
Block replacement or ECC
Update
Block Address
Increment
Block replacement
New area (after GC)
Procedure
ECC
AI07588C
Software algorithms
AI07599B
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