NAND01GW3B2AN6F STMicroelectronics, NAND01GW3B2AN6F Datasheet - Page 48
NAND01GW3B2AN6F
Manufacturer Part Number
NAND01GW3B2AN6F
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2AN6F
Manufacturer:
ST
Quantity:
101
DC and AC parameters
Figure 21. Data Input Latch AC waveforms
1. Data in last is 2112 in x8 devices and 1056 in x16 devices.
Figure 22. Sequential data output after read AC waveforms
1. CL = Low, AL = Low, W = High.
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I/O
CL
AL
W
E
RB
I/O
E
R
(ALSetup time)
tALLWH
tBHRL
(R Accesstime)
tWLWH
tRLQV
(Data Setup time)
tDVWH
(Read Cycle time)
Data Out
tRHRL
(R High Holdtime)
tWLWL
Data In 0
tRLRL
tRLQV
(Data Hold time)
tDVWH
tWHDX
tWLWH
tRHQZ
Data Out
Data In 1
tDVWH
tWHDX
Data In
NAND01G-B2B, NAND02G-B2C
Last
tEHQZ
Data Out
tRLQV
tWLWH
tWHDX
(E Hold time)
tWHEH
tRHQZ
(CL Hold time)
tWHCLH
ai13107
ai08031