NAND02GW3B2AN6F STMicroelectronics, NAND02GW3B2AN6F Datasheet - Page 45

IC FLASH 2GBIT 48TSOP

NAND02GW3B2AN6F

Manufacturer Part Number
NAND02GW3B2AN6F
Description
IC FLASH 2GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of NAND02GW3B2AN6F

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
NAND01G-B, NAND02G-B
10
Maximum rating
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 19.
1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins.
Maximum voltage may overshoot to V
Symbol
T
V
T
V
BIAS
IO
STG
DD
(1)
Absolute Maximum Ratings
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Parameter
DD
+ 2V for less than 20ns during transitions on I/O pins.
1.8V devices
1.8V devices
3 V devices
3 V devices
Table 19: Absolute Maximum
– 0.6
– 0.6
– 0.6
– 0.6
– 50
– 65
Min
Value
Max
125
150
2.7
4.6
2.7
4.6
Maximum rating
Ratings, may
Unit
°C
°C
V
V
V
V
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