NAND02GW3B2AN6F STMicroelectronics, NAND02GW3B2AN6F Datasheet - Page 56

IC FLASH 2GBIT 48TSOP

NAND02GW3B2AN6F

Manufacturer Part Number
NAND02GW3B2AN6F
Description
IC FLASH 2GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of NAND02GW3B2AN6F

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
DC And AC parameters
Figure 31. Block Erase AC Waveform
1. Address cycle 3 is required for 2Gb devices only.
Figure 32. Reset AC Waveform
56/64
RB
I/O
AL
CL
W
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
cycle 3
Add.
tWHBL
(Reset Busy time)
tBLBH4
Confirm
D0h
Code
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
NAND01G-B, NAND02G-B
SR0
ai08043
ai08038b

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