CY7C1512AV18-250BZI Cypress Semiconductor Corp, CY7C1512AV18-250BZI Datasheet - Page 15

no-image

CY7C1512AV18-250BZI

Manufacturer Part Number
CY7C1512AV18-250BZI
Description
IC SRAM 72MBIT 250MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp

Specifications of CY7C1512AV18-250BZI

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (4M x 18)
Speed
250MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1512AV18-250BZI
Manufacturer:
CYPRESS
Quantity:
490
Part Number:
CY7C1512AV18-250BZI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1512AV18-250BZIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05565 Rev. *E
TAP Controller Block Diagram
TAP Electrical Characteristics
TAP AC Switching Characteristics
V
V
V
V
V
V
I
t
t
t
t
Set-up Times
t
t
t
Notes:
11. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
12. t
13. Test conditions are specified using the load in TAP AC test conditions. t
X
TCYC
TF
TH
TL
TMSS
TDIS
CS
Parameter
TDI
OH1
OH2
OL1
OL2
IH
IL
Parameter
CS
and t
TCK
TMS
CH
refer to the set-up and hold time requirements of latching data from the boundary scan register.
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
TCK Clock LOW
TMS Set-up to TCK Clock Rise
TDI Set-up to TCK Clock Rise
Capture Set-up to TCK Rise
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and OutputLoad Current
Selection
Circuitry
Description
Over the Operating Range
108
31
Over the Operating Range
Boundary Scan Register
Description
30
.
Identification Register
Instruction Register
TAP Controller
29
.
I
I
I
I
GND ≤ V
OH
OH
OL
OL
R
.
.
/t
F
= 2.0 mA
= 100 µA
= −2.0 mA
= −100 µA
Test Conditions
= 1 ns.
.
.
[16, 18, 11]
I
≤ V
Bypass Register
2
2
2
DD
[12, 13]
1
1
1
0
0
0
0
0.65V
Min.
–0.3
1.4
1.6
–5
DD
Selection
Circuitry
Min.
50
20
20
5
5
5
CY7C1517V18
CY7C1528V18
CY7C1519V18
CY7C1521V18
V
0.35V
DD
Max.
Max.
0.4
0.2
20
5
+ 0.3
DD
Page 15 of 28
TDO
Unit
MHz
ns
ns
ns
ns
ns
ns
Unit
µA
V
V
V
V
V
V

Related parts for CY7C1512AV18-250BZI