M29W640GH70NA6E NUMONYX, M29W640GH70NA6E Datasheet - Page 42
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M29W640GH70NA6E
Manufacturer Part Number
M29W640GH70NA6E
Description
IC FLASH 64MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W640GH70NB6E.pdf
(90 pages)
Specifications of M29W640GH70NA6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
64KByte x 128
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W640GH70NA6E
Manufacturer:
ST
Quantity:
3 160
Table 13.
1. Unspecified data bits should be ignored.
42/90
Program
Program During Erase
Suspend
Write to Buffer and
Program Abort
Write to Buffer and
Program
Program Error
Chip Erase
Block Erase before
timeout
Block Erase
Erase Suspend
Erase Error
Operation
Status register bits
Faulty block address
Good block address
Non-erasing block
Non-erasing block
Non-erasing block
Erasing block
Erasing block
Erasing block
Any address
Any address
Any address
Any address
Any address
Any address
Address
(1)
DQ7
DQ7
DQ7
DQ7
DQ7
DQ7
0
0
0
0
0
1
0
0
No Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ6
Data read as normal
DQ5
0
0
0
0
1
0
0
0
0
1
0
0
1
DQ3
–
–
–
–
–
1
0
0
1
1
–
1
1
No Toggle
No Toggle
No Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ2
–
–
–
–
–
DQ1
0
–
1
0
–
–
–
–
–
–
–
–
–
–
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
RB
0
0
0
0
0
0
0
0
0