M29W640GT70ZA6EP NUMONYX, M29W640GT70ZA6EP Datasheet - Page 39

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M29W640GT70ZA6EP

Manufacturer Part Number
M29W640GT70ZA6EP
Description
IC FLASH 64MB 3V 70NS TB TFBGA48
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W640GT70ZA6EP

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W640GT70ZA6EP
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M29W640GT70ZA6EP
Manufacturer:
ST
0
Figure 8.
1. For a Chip Erase command, addresses and data are 555h and 10h, respectively, while they are BA and 30h for a Block
2. BA is the block address.
3. See
Erase command.
Table 19: Write AC characteristics
DQ0-DQ7/
DQ8-DQ15
A0-A20/
A–1
E
G
W
Chip/block erase waveforms (8-bit mode)
tGHWL
tAVAV
tELWL
tWLWH
tDVWH
tAVWL
555h
AAh
and
Table 18: Read AC characteristics
tWHEH
tWHDX
2AAh
tWHWL
55h
tWLAX
555h
80h
555h
AAh
2AAh
for details on the timings.
55h
555h/BA
(1)
10h/
30h
AI12781
39/90

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