M25PE16-VMP6TG NUMONYX, M25PE16-VMP6TG Datasheet - Page 12
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M25PE16-VMP6TG
Manufacturer Part Number
M25PE16-VMP6TG
Description
IC FLASH 16MBIT 75MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M45PE16-VMP6TG.pdf
(58 pages)
Specifications of M25PE16-VMP6TG
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Cell Type
NOR
Density
16Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
MLP EP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
2M
Supply Current
12mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE16-VMP6TGCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25PE16-VMP6TG
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M25PE16-VMP6TG
Manufacturer:
ST
Quantity:
20 000
Operating features
4
4.1
4.2
12/58
Operating features
Sharing the overhead of modifying data
To write or program one (or more) data bytes, two instructions are required: write enable
(WREN), which is one byte, and a page write (PW) or page program (PP) sequence, which
consists of four bytes plus data. This is followed by the internal cycle (of duration t
To share this overhead, the page write (PW) or page program (PP) instruction allows up to
256 bytes to be programmed (changing bits from ‘1’ to ‘0’) or written (changing bits to ‘0’ or
‘1’) at a time, provided that they lie in consecutive addresses on the same page of memory.
An easy way to modify data
The page write (PW) instruction provides a convenient way of modifying data (up to 256
contiguous bytes at a time), and simply requires the start address, and the new data in the
instruction sequence.
The page write (PW) instruction is entered by driving Chip Select (S) Low, and then
transmitting the instruction byte, three address bytes (A23-A0) and at least one data byte,
and then driving Chip Select (S) High. While Chip Select (S) is being held Low, the data
bytes are written to the data buffer, starting at the address given in the third address byte
(A7-A0). When Chip Select (S) is driven High, the write cycle starts. The remaining,
unchanged, bytes of the data buffer are automatically loaded with the values of the
corresponding bytes of the addressed memory page. The addressed memory page then
automatically put into an erase cycle. Finally, the addressed memory page is programmed
with the contents of the data buffer.
All of this buffer management is handled internally, and is transparent to the user. The user
is given the facility of being able to alter the contents of the memory on a byte-by-byte basis.
For optimized timings, it is recommended to use the page write (PW) instruction to write all
consecutive targeted bytes in a single sequence versus using several page write (PW)
sequences with each containing only a few bytes (see
Table 18: AC characteristics (50 MHz
operation)).
operation), and
Table 19: AC characteristics (75 MHz
Section 6.9: Page write
(PW),
PW
M25PE16
or t
PP
).