TC58V64BFT(F) Toshiba, TC58V64BFT(F) Datasheet - Page 32

• Manufacturer Part Number: TC58V64BFT(F)
• Description: IC FLASH 64MBIT 50NS 44TSOP
• Manufacturer: Toshiba

Specifications of TC58V64BFT(F)

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 64M (8M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TC58V64BFT

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The following possible failure modes should be considered when implementing a highly reliable system.
·
·
Failure phenomena for Program and Erase operations
Block
Page
Single Bit
The device may fail during a Program or Erase operation.
ECC: Error Correction Code
Block Replacement
Program
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
memory
FAILURE MODE
Buffer
Erase Failure
Programming
Failure
Programming
Failure
1 ® 0
Error occurs
Figure 28.
Status Read after Erase ® Block Replacement
Status Read after Program ® Block Replacement
(1) Block Verify after Program ® Retry
(2) ECC
DETECTION AND COUNTERMEASURE SEQUENCE
Block A
Block B
reprogram the data into another Block (Block B)
by loading from an external buffer. Then,
prevent further system accesses to Block A (by
creating a bad block table or by using an
another appropriate scheme).
When an error happens in Block A, try to
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