TC55VCM316BTGN55LA Toshiba, TC55VCM316BTGN55LA Datasheet - Page 10

• Manufacturer Part Number: TC55VCM316BTGN55LA
• Description: IC SRAM 8MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VCM316BTGN55LA

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TC55VCM316BTGN55LB

WRITE CYCLE 2 (
WRITE CYCLE 3 (CE2 CONTROLLED)
UB , LB
UB , LB
Address
Address
A0~A18
I/O1~16
I/O1~16
A0~A18
I/O1~16
I/O1~16
D
D
R/W
CE2
R/W
CE2
OUT
OUT
CE
CE
D
D
IN
IN
1
1
CE1
CONTROLLED)
TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45,55
TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70
t
t
AS
AS
Hi-Z
Hi-Z
t
t
COE
COE
t
t
BE
BE
t
t
t
t
WC
WC
ODW
ODW
t
t
t
t
CW
CW
CW
CW
t
t
BW
BW
t
t
WP
WP
VALID DATA IN
VALID DATA IN
t
t
DS
DS
t
t
DH
DH
t
t
WR
WR
Hi-Z
Hi-Z
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